DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Bong Ho | ko |
dc.contributor.author | Kuk, Song-hyeon | ko |
dc.contributor.author | Kim, Seong Kwang | ko |
dc.contributor.author | Kim, Joon Pyo | ko |
dc.contributor.author | Geum, Dae-Myeong | ko |
dc.contributor.author | Baek, Seung-Hyub | ko |
dc.contributor.author | Kim, Sang Hyeon | ko |
dc.date.accessioned | 2022-10-05T07:00:17Z | - |
dc.date.available | 2022-10-05T07:00:17Z | - |
dc.date.created | 2022-09-14 | - |
dc.date.created | 2022-09-14 | - |
dc.date.created | 2022-09-14 | - |
dc.date.issued | 2022-09 | - |
dc.identifier.citation | NANOSCALE ADVANCES, v.4, no.19, pp.4114 - 4121 | - |
dc.identifier.issn | 2516-0230 | - |
dc.identifier.uri | http://hdl.handle.net/10203/298830 | - |
dc.description.abstract | HfO2-based ferroelectric (FE) materials have emerged as a promising material for non-volatile memory applications because of remanent polarization, scalability of thickness below 10 nm, and compatibility with complementary metal-oxide-semiconductor technology. However, in the metal/FE/insulator/semiconductor, it is difficult to improve switching voltage (V-sw), endurance, and retention properties due to the interfacial layer (IL), which inevitably grows during the fabrication. Here, we proposed and demonstrated oxygen scavenging to reduce the IL thickness in an HfZrOx-based capacitor and the thinner IL was confirmed by cross-sectional transmission electron microscopy. V-sw of a capacitor with scavenging decreased by 18% and the same P-r could be obtained at a lower voltage than a capacitor without scavenging. In addition, excellent endurance properties up to 10(6) cycles were achieved. We believe oxygen scavenging has great potential for future HfZrOx-based memory device applications. | - |
dc.language | English | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | Oxygen scavenging of HfZrO2-based capacitors for improving ferroelectric properties | - |
dc.type | Article | - |
dc.identifier.wosid | 000849267900001 | - |
dc.identifier.scopusid | 2-s2.0-85139064981 | - |
dc.type.rims | ART | - |
dc.citation.volume | 4 | - |
dc.citation.issue | 19 | - |
dc.citation.beginningpage | 4114 | - |
dc.citation.endingpage | 4121 | - |
dc.citation.publicationname | NANOSCALE ADVANCES | - |
dc.identifier.doi | 10.1039/d2na00533f | - |
dc.contributor.localauthor | Kim, Sang Hyeon | - |
dc.contributor.nonIdAuthor | Geum, Dae-Myeong | - |
dc.contributor.nonIdAuthor | Baek, Seung-Hyub | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordPlus | RELIABILITY | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | FILMS | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.