A 21-41-GHz Common-Gate LNA With TLT Matching Networks in 28-nm FDSOI CMOS

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A wideband common-gate (CG) cascode low-noise amplifier (LNA) is demonstrated with a 28-nm fully depleted silicon on insulator (FDSOI) CMOS process. Wide bandwidth is achieved with a CG structure in the first stage and tightly coupled (k=0.86) transmission line transformer (TLT) matching networks. A gm-boosting technique with cross-coupled capacitors improves the gain and noise figure (NF) of the CG amplifier. A high-input 1-dB gain compression point (IP1 dB) can be achieved by introducing an inter-stage inductor at the second-stage cascode amplifier. The LNA shows 19.3 dB gain, 3.1 dB NF, 19.8 GHz (63%) of 3 dB bandwidth, and -15.7 dBm IP1 dB at 28 GHz.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2022-09
Language
English
Article Type
Article
Citation

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.32, no.9, pp.1051 - 1054

ISSN
1531-1309
DOI
10.1109/LMWC.2022.3169066
URI
http://hdl.handle.net/10203/298500
Appears in Collection
EE-Journal Papers(저널논문)
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