Thermal Properties and Phonon Spectral Characterization of Synthetic Boron Phosphide for High Thermal Conductivity Applications

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dc.contributor.authorKang, Joon Sangko
dc.contributor.authorWu, Huanko
dc.contributor.authorHu, Yongjieko
dc.date.accessioned2022-08-02T09:01:12Z-
dc.date.available2022-08-02T09:01:12Z-
dc.date.created2022-08-02-
dc.date.issued2017-12-
dc.identifier.citationNANO LETTERS, v.17, no.12, pp.7507 - 7514-
dc.identifier.issn1530-6984-
dc.identifier.urihttp://hdl.handle.net/10203/297697-
dc.description.abstractHeat dissipation is an increasingly critical technological challenge in modern electronics and photonics as devices continue to shrink to the nanoscale. To address this challenge, high thermal conductivity materials that can efficiently dissipate heat from hot spots and improve device performance are urgently needed. Boron phosphide is a unique high thermal conductivity and refractory material with exceptional chemical inertness, hardness, and high thermal stability, which holds high promises for many practical applications. So far, however, challenges with boron phosphide synthesis and characterization have hampered the understanding of its fundamental properties and potential applications. Here, we describe a systematic thermal transport study based on a synergistic synthesis-experimental-modeling approach: we have chemically synthesized high-quality boron phosphide single crystals and measured their thermal conductivity as a record-high 460 W/mK at room temperature. Through nanoscale ballistic transport, we have, for the first time, mapped the phonon spectra of boron phosphide and experimentally measured its phonon mean free-path spectra with consideration of both natural and isotope-pure abundances. We have also measured the temperature- and size-dependent thermal conductivity and performed corresponding calculations by solving the three-dimensional and spectral-dependent phonon Boltzmann transport equation using the variance-reduced Monte Carlo method. The experimental results are in good agreement with that predicted by multiscale simulations and density functional theory, which together quantify the heat conduction through the phonon mode dependent scattering process. Our finding underscores the promise of boron phosphide as a high thermal conductivity material for a wide range of applications, including thermal management and energy regulation, and provides a detailed, microscopic-level understanding of the phonon spectra and thermal transport mechanisms of boron phosphide. The present study paves the way toward the establishment of a new framework, based on the phonon spectra material structure relationship, for the rational design of high thermal conductivity materials and nano- to multiscale devices.-
dc.languageEnglish-
dc.publisherAMER CHEMICAL SOC-
dc.titleThermal Properties and Phonon Spectral Characterization of Synthetic Boron Phosphide for High Thermal Conductivity Applications-
dc.typeArticle-
dc.identifier.wosid000418393300046-
dc.identifier.scopusid2-s2.0-85038206826-
dc.type.rimsART-
dc.citation.volume17-
dc.citation.issue12-
dc.citation.beginningpage7507-
dc.citation.endingpage7514-
dc.citation.publicationnameNANO LETTERS-
dc.identifier.doi10.1021/acs.nanolett.7b03437-
dc.contributor.localauthorKang, Joon Sang-
dc.contributor.nonIdAuthorWu, Huan-
dc.contributor.nonIdAuthorHu, Yongjie-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorBoron phosphide-
dc.subject.keywordAuthorhigh thermal conductivity materials-
dc.subject.keywordAuthorthermal management-
dc.subject.keywordAuthorheat dissipation-
dc.subject.keywordAuthorphonon mode-
dc.subject.keywordAuthormean free path spectra-
dc.subject.keywordAuthorballistic thermal transport-
dc.subject.keywordAuthorBoltzmann equation-
dc.subject.keywordAuthorvariance-reduced Monte Carlo simulation-
dc.subject.keywordAuthorab initio calculations-
dc.subject.keywordAuthortime-domain thermoreflectance-
dc.subject.keywordPlusHEAT-CONDUCTION-
dc.subject.keywordPlusMONTE-CARLO-
dc.subject.keywordPlusAB-INITIO-
dc.subject.keywordPlusNITRIDE-
dc.subject.keywordPlusSEMICONDUCTOR-
dc.subject.keywordPlusTRANSPORT-
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