Strain solves switch hitch for an antiferromagnetic material
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Kab-Jin | ko |
| dc.contributor.author | Lee, Kyung-Jin | ko |
| dc.date.accessioned | 2022-08-02T02:00:30Z | - |
| dc.date.available | 2022-08-02T02:00:30Z | - |
| dc.date.created | 2022-08-01 | - |
| dc.date.created | 2022-08-01 | - |
| dc.date.issued | 2022-07 | - |
| dc.identifier.citation | NATURE, v.607, no.7919, pp.452 - 453 | - |
| dc.identifier.issn | 0028-0836 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/297667 | - |
| dc.description.abstract | Applying strain to a material that has a type of magnetism called antiferromagnetism allows its magnetization to be fully switched with an electric current - making it appealing for use in next-generation magnetic memory devices. Full electrical switching in an antiferromagnet. | - |
| dc.language | English | - |
| dc.publisher | NATURE PORTFOLIO | - |
| dc.title | Strain solves switch hitch for an antiferromagnetic material | - |
| dc.type | Article | - |
| dc.identifier.wosid | 000828743400007 | - |
| dc.identifier.scopusid | 2-s2.0-85134396936 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 607 | - |
| dc.citation.issue | 7919 | - |
| dc.citation.beginningpage | 452 | - |
| dc.citation.endingpage | 453 | - |
| dc.citation.publicationname | NATURE | - |
| dc.identifier.doi | 10.1038/d41586-022-01941-3 | - |
| dc.contributor.localauthor | Kim, Kab-Jin | - |
| dc.contributor.localauthor | Lee, Kyung-Jin | - |
| dc.description.isOpenAccess | N | - |
| dc.type.journalArticle | Editorial Material | - |
| dc.subject.keywordAuthor | Condensed-matter physics | - |
| dc.subject.keywordAuthor | Materials science | - |
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