DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Jeonyoon | ko |
dc.contributor.author | Stein, Itai Y. | ko |
dc.contributor.author | Devoe, Mackenzie E. | ko |
dc.contributor.author | Lewis, Diana J. | ko |
dc.contributor.author | Lachman, Noa | ko |
dc.contributor.author | Kessler, Seth S. | ko |
dc.contributor.author | Buschhorn, Samuel T. | ko |
dc.contributor.author | Wardle, Brian L. | ko |
dc.date.accessioned | 2022-06-21T06:00:34Z | - |
dc.date.available | 2022-06-21T06:00:34Z | - |
dc.date.created | 2022-06-21 | - |
dc.date.issued | 2015-02 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.106, no.5 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/296994 | - |
dc.description.abstract | Here, we quantify the electron transport properties of aligned carbon nanotube (CNT) networks as a function of the CNT length, where the electrical conductivities may be tuned by up to 10x with anisotropies exceeding 40%. Testing at elevated temperatures demonstrates that the aligned CNT networks have a negative temperature coefficient of resistance, and application of the fluctuation induced tunneling model leads to an activation energy of approximate to 14 meV for electron tunneling at the CNT-CNT junctions. Since the tunneling activation energy is shown to be independent of both CNT length and orientation, the variation in electron transport is attributed to the number of CNT-CNT junctions an electron must tunnel through during its percolated path, which is proportional to the morphology of the aligned CNT network. (C) 2015 AIP Publishing LLC. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Impact of carbon nanotube length on electron transport in aligned carbon nanotube networks | - |
dc.type | Article | - |
dc.identifier.wosid | 000349611800056 | - |
dc.identifier.scopusid | 2-s2.0-84923899881 | - |
dc.type.rims | ART | - |
dc.citation.volume | 106 | - |
dc.citation.issue | 5 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.4907608 | - |
dc.contributor.localauthor | Lee, Jeonyoon | - |
dc.contributor.nonIdAuthor | Stein, Itai Y. | - |
dc.contributor.nonIdAuthor | Devoe, Mackenzie E. | - |
dc.contributor.nonIdAuthor | Lewis, Diana J. | - |
dc.contributor.nonIdAuthor | Lachman, Noa | - |
dc.contributor.nonIdAuthor | Kessler, Seth S. | - |
dc.contributor.nonIdAuthor | Buschhorn, Samuel T. | - |
dc.contributor.nonIdAuthor | Wardle, Brian L. | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | INDUCED TUNNELING CONDUCTION | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | NANOCOMPOSITES | - |
dc.subject.keywordPlus | COMPOSITES | - |
dc.subject.keywordPlus | GRAPHENE | - |
dc.subject.keywordPlus | ARRAYS | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | MORPHOLOGY | - |
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