DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Sunwoo | ko |
dc.contributor.author | Jeon, Jaeyoung | ko |
dc.contributor.author | Eom, Kitae | ko |
dc.contributor.author | Jeong, Chaehwa | ko |
dc.contributor.author | Yang, Yongsoo | ko |
dc.contributor.author | Park, Ji-Yong | ko |
dc.contributor.author | Eom, Chang-Beom | ko |
dc.contributor.author | Lee, Hyungwoo | ko |
dc.date.accessioned | 2022-06-13T09:01:27Z | - |
dc.date.available | 2022-06-13T09:01:27Z | - |
dc.date.created | 2022-06-13 | - |
dc.date.created | 2022-06-13 | - |
dc.date.created | 2022-06-13 | - |
dc.date.issued | 2022-05 | - |
dc.identifier.citation | SCIENTIFIC REPORTS, v.12, no.1 | - |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | http://hdl.handle.net/10203/296893 | - |
dc.description.abstract | Resistive switching devices have been regarded as a promising candidate of multi-bit memristors for synaptic applications. The key functionality of the memristors is to realize multiple non-volatile conductance states with high precision. However, the variation of device conductance inevitably causes the state-overlap issue, limiting the number of available states. The insufficient number of states and the resultant inaccurate weight quantization are bottlenecks in developing practical memristors. Herein, we demonstrate a resistive switching device based on Pt/LaAlO3/SrTiO3 (Pt/LAO/STO) heterostructures, which is suitable for multi-level memristive applications. By redistributing the surface oxygen vacancies, we precisely control the tunneling of two-dimensional electron gas (2DEG) through the ultrathin LAO barrier, achieving multiple and tunable conductance states (over 27) in a non-volatile way. To further improve the multi-level switching performance, we propose a variance-aware weight quantization (VAQ) method. Our simulation studies verify that the VAQ effectively reduces the state-overlap issue of the resistive switching device. We also find that the VAQ states can better represent the normal-like data distribution and, thus, significantly improve the computing accuracy of the device. Our results provide valuable insight into developing high-precision multi-bit memristors based on complex oxide heterostructures for neuromorphic applications. | - |
dc.language | English | - |
dc.publisher | NATURE PORTFOLIO | - |
dc.title | Variance-aware weight quantization of multi-level resistive switching devices based on Pt/LaAlO3/SrTiO3 heterostructures | - |
dc.type | Article | - |
dc.identifier.wosid | 000803920600057 | - |
dc.identifier.scopusid | 2-s2.0-85130991558 | - |
dc.type.rims | ART | - |
dc.citation.volume | 12 | - |
dc.citation.issue | 1 | - |
dc.citation.publicationname | SCIENTIFIC REPORTS | - |
dc.identifier.doi | 10.1038/s41598-022-13121-4 | - |
dc.contributor.localauthor | Yang, Yongsoo | - |
dc.contributor.nonIdAuthor | Lee, Sunwoo | - |
dc.contributor.nonIdAuthor | Jeon, Jaeyoung | - |
dc.contributor.nonIdAuthor | Eom, Kitae | - |
dc.contributor.nonIdAuthor | Park, Ji-Yong | - |
dc.contributor.nonIdAuthor | Eom, Chang-Beom | - |
dc.contributor.nonIdAuthor | Lee, Hyungwoo | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | INTERFACES | - |
dc.subject.keywordPlus | GAS | - |
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