Threshold Switching – Phase Change Memory for Volatile-Nonvolatile Coexistence
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 성상현 | ko |
| dc.contributor.author | 이건재 | ko |
| dc.date.accessioned | 2022-06-09T06:01:01Z | - |
| dc.date.available | 2022-06-09T06:01:01Z | - |
| dc.date.created | 2022-06-09 | - |
| dc.date.issued | 2022-01-25 | - |
| dc.identifier.citation | 제 29회 한국반도체학술대회 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/296867 | - |
| dc.language | Korean | - |
| dc.publisher | 대한전자공학회, 반도체공학회 | - |
| dc.title | Threshold Switching – Phase Change Memory for Volatile-Nonvolatile Coexistence | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 제 29회 한국반도체학술대회 | - |
| dc.identifier.conferencecountry | KO | - |
| dc.identifier.conferencelocation | 강원도 하이원 그랜드호텔 컨벤션타워 | - |
| dc.contributor.localauthor | 이건재 | - |
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