Study on self-clocking fast and variation tolerant true random number generator based on a stochastic oscillation by NbOx Mott memristor

Abstract

As fourth industrial revolution has been come, security is increasingly important. Given that random number is essential for encryption, developing true random number is necessary as it is non-decryptable. Researchers have been studying utilizing the intrinsic stochasticity of the memristor to generate true random numbers. Here we propose a novel method to generate true random numbers utilizing the stochastic oscillation behavior of NbO$_x$ mott memristor. It is operated by self-clocking induced by the oscillation signal from mott memristor. The random number generation rate can be over 40 kb s-1, which is the fastest record compared with previous volatile memristor-based TRNG devices. Furthermore, its dimensionless operating principle enables high tolerance against both ambient temperature and device-to-device variations, realizing strong security hardware viable in harsh environments.