Studies on formation of long-wavelength visible light emitting InGaN quantum dots using triangular pyramidal structures

Abstract

For the few last decades, semiconductor quantum dots (QDs) are emerging as an ideal candidate for single photon source (SPS) which play a key role in quantum technology, due to their unique optical and material properties. Depending on alloy composition, Ⅲ-nitride semiconductor’s emitting wavelength show a wide spectrum from UV to near IR. In this thesis, we tried to developed the InGaN/GaN pyramidal QDs as a deterministic, site-controlled SPS with long visible wavelength for wireless quantum communication application. Three different growth tactics like epitaxial lateral overgrowth (ELOG) of GaN core, InGaN interlayer and volcano structures are designed. We produced InGaN/GaN pyramidal QDs with 518 nm peak, FWHM of 0.83meV and 65.7% of degree of linear polarization.