DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shin, Mincheol | ko |
dc.contributor.author | Jeon, SeongHyeok | ko |
dc.date.accessioned | 2022-02-23T06:42:29Z | - |
dc.date.available | 2022-02-23T06:42:29Z | - |
dc.identifier.uri | http://hdl.handle.net/10203/292368 | - |
dc.description.abstract | Provided is a method for simulating a semiconductor device. The method includes extracting a Hamiltonian and an overlap matrix of a semiconductor device using a density functional theory or a tight-binding method, calculating each of Bloch states for each corresponding energy, obtaining a first reduced Hamiltonian and a first reduced overlap matrix with a reduced matrix size, and calculating a final transformation matrix and a final energy band structure in which all of unphysical branches, wherein the semiconductor device includes a source region, a drain region, and a channel region between the source region and the drain region, wherein the channel region includes unit cells, each of which includes different material or has different structure. | - |
dc.title | Method for simulating semiconductor device | - |
dc.title.alternative | 이종접합 반도체 소자 시뮬레이션 방법 | - |
dc.type | Patent | - |
dc.type.rims | PAT | - |
dc.contributor.localauthor | Shin, Mincheol | - |
dc.contributor.nonIdAuthor | Jeon, SeongHyeok | - |
dc.contributor.assignee | KAIST | - |
dc.identifier.iprsType | 특허 | - |
dc.identifier.patentApplicationNumber | 16951351 | - |
dc.identifier.patentRegistrationNumber | 11227088 | - |
dc.date.application | 2020-11-18 | - |
dc.date.registration | 2022-01-18 | - |
dc.publisher.country | US | - |
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