2D InSe is one of the semimetal chalcogenides that has been recently given attention thanks to its excellent electrical properties, such as high mobility near 1000 cm2 V−1 s−1 and moderate band gap of ≈1.26 eV suitable for IR detection. In this talk, I will introduce our novel IR photodetectors using surface-doped InSe as a channel and multilayer graphenes as electrodes. IR photodetectors have been receiving increasing attention due to their applications in self-driving cars, networking IoT devices, biosensing, etc. A few top layers of InSe are p-doped using AuCl3, an electron absorbing material. Our surface-doped InSe photodetectors show outstanding performance, achieving a photoresponsivity (R) of ≈19,300 A W−1 and a detectivity (D*) of ≈3 × 1013 Jones at λ = 470 nm, and R of ≈7870 A W−1 and D* of ≈1.5 × 1013 Jones at λ = 980 nm, superior to previously reported 2D material based IR photodetectors. A detailed analysis regarding the impact of doping, an electrode type, the structure of graphene electrodes, and the encapsulation using hBN dielectric on the electrical and photoelectrical properties will be presented. I will also briefly talk about our newly demonstrated high-performance self-driven photodetectors as well.