DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Junsung | ko |
dc.contributor.author | Kim, Do Hyung | ko |
dc.contributor.author | Cho, Seong-In | ko |
dc.contributor.author | Lee, Seung Hee | ko |
dc.contributor.author | Jeong, Wooseok | ko |
dc.contributor.author | Park, Sang-Hee Ko | ko |
dc.date.accessioned | 2021-12-07T06:41:22Z | - |
dc.date.available | 2021-12-07T06:41:22Z | - |
dc.date.created | 2021-12-07 | - |
dc.date.created | 2021-12-07 | - |
dc.date.created | 2021-12-07 | - |
dc.date.issued | 2021-12 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.42, no.12, pp.1798 - 1801 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/290102 | - |
dc.description.abstract | Channel-shortening effect (CSE) in oxide thin film transistors (TFTs) is a crucial issue that must be resolved for applications in ultra-high-resolution displays. One of the origins of the CSE is the diffusion of a shallow donor such as hydrogen from other layers into the channel. In this study, we investigated for the first time the CSE of self-aligned Al-doped In-Sn-Zn-O (Al-ITZO) TFTs with planar and trench structures. The TFTs with planar structures exhibited severe negative V-ON shifts after an annealing process, whereas the TFTswith trench structures were barely affected, thereby exhibiting excellent O-N/O-FF characteristics. The vertical channel in the trench TFT had higher resistance than the horizontal channel because of a back- sidewall roughness and thin channel. The high resistance of vertical channels played a significant role in determining the O-N/O-FF characteristics of Al-ITZO TFT, where VON remained constant until the diffused shallow donors made the resistive vertical channels become conductive. Based on these unique operation characteristics, the suppression of CSE in a trench TFT was demonstrated even under a high annealing temperature. Trench TFT exhibited higher mobility, higher drain currents, and higher stability than planar TFT, thus making it suitable for ultra-high-resolution displays. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Channel-Shortening Effect Suppression of a High-Mobility Self-Aligned Oxide TFT Using Trench Structure | - |
dc.type | Article | - |
dc.identifier.wosid | 000722001400029 | - |
dc.identifier.scopusid | 2-s2.0-85118630934 | - |
dc.type.rims | ART | - |
dc.citation.volume | 42 | - |
dc.citation.issue | 12 | - |
dc.citation.beginningpage | 1798 | - |
dc.citation.endingpage | 1801 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/LED.2021.3125146 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Park, Sang-Hee Ko | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | High current | - |
dc.subject.keywordAuthor | high stability | - |
dc.subject.keywordAuthor | suppressing channel-shortening effect | - |
dc.subject.keywordAuthor | trench structure | - |
dc.subject.keywordPlus | GA-ZN-O | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | HYDROGEN DIFFUSION | - |
dc.subject.keywordPlus | LAYER | - |
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