Quantum capacitance of vertical tunnel field-effect transistors: A first-principles study
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 이룡규 | ko |
| dc.contributor.author | 김용훈 | ko |
| dc.contributor.author | 이주호 | ko |
| dc.contributor.author | 김태형 | ko |
| dc.date.accessioned | 2021-11-26T06:46:48Z | - |
| dc.date.available | 2021-11-26T06:46:48Z | - |
| dc.date.created | 2021-11-26 | - |
| dc.date.issued | 2021-10-21 | - |
| dc.identifier.citation | 2021 한국물리학회 가을학술대회 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/289545 | - |
| dc.language | English | - |
| dc.publisher | 한국물리학회 | - |
| dc.title | Quantum capacitance of vertical tunnel field-effect transistors: A first-principles study | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 2021 한국물리학회 가을학술대회 | - |
| dc.identifier.conferencecountry | KO | - |
| dc.identifier.conferencelocation | 온라인 | - |
| dc.contributor.localauthor | 김용훈 | - |
| dc.contributor.nonIdAuthor | 이주호 | - |
| dc.contributor.nonIdAuthor | 김태형 | - |
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