Controlling spin-orbit coupling strength of bulk transition metal dichalcogenide semiconductors

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Transition metal dichalcogenide (TMD) semiconductors are attracting much attention in research regarding device physics based on their unique properties that can be utilized in spintronics and valleytronics. Although current studies concentrate on the monolayer form due to the explicitly broken inversion symmetry and the direct band gap, bulk materials also hold the capability of carrying spin and valley current. In this study, we report the methodology to continuously control the spin-orbit coupling (SOC) strength of bulk TMDs Mo1-xWxSe2 by changing the atomic ratio between Mo and W. The results show the size of band splitting at the K valley the measure of the coupling strength is linearly proportional to the atomic ratio of Mo and W. Our results thus demonstrate how to precisely tune the SOC coupling strength, and the collected information of which can serve as a reference for future applications of bulk TMDs.
Publisher
ELSEVIER
Issue Date
2021-10
Language
English
Article Type
Article
Citation

CURRENT APPLIED PHYSICS, v.30, pp.4 - 7

ISSN
1567-1739
DOI
10.1016/j.cap.2021.03.008
URI
http://hdl.handle.net/10203/289512
Appears in Collection
PH-Journal Papers(저널논문)
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