Dynamic-Capacitance Characteristics of RTD-pair Configuration for Improved Frequency and Output-Power Potential

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Abstract—In this work, a resonant tunneling diode (RTD)-pair configuration has been studied by analyzing the dynamic capacitance characteristics of the RTD for improved high-frequency and output-power performances. The analyses indicate that not only the output power can be significantly improved at an optimum bias voltage of the RTD-pair configuration, but also it operates at a much smaller dynamic capacitance region, making the RTD-pair configuration beneficial for high frequency and high output power operation.
Publisher
Compound Semiconductor Week
Issue Date
2021-05-11
Language
English
Citation

Compound Semiconductor Week 2021(CSW2021)

URI
http://hdl.handle.net/10203/289446
Appears in Collection
EE-Conference Papers(학술회의논문)
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