Highly stable OTFT-NVMs with hydroxyl group charge trapping layer via iCVD dielectric.

Abstract

With the development of wearable devices. Organic flash memory gets great attention because it is suitable for wearable devices. However, OTFT-NVMs have high operation voltage and data stability problems caused by thick insulation layer. This study introduced iCVD dielectric for the solution. Tunneling layer is poly(1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane) (pV3D3) and blocking dielectric is poly(1,4-butanediol diacrylate)(pBDDA), with excellent insulation properties (Ebreak > 8 MV/cm with its thickness of 21.3nm). For long-term memory operation A 6-nm thick ultrathin trapping layer with a hydroxyl group was introduced between the tunneling layer and the blocking layer. Novel trapping layer synthesize with the copolymer of 1,4-butanediol diacrylate (BDDA) and 2-Hydroxyethyl acrylate (HEA). Finally, we can fabricate low power and stable memory. Large window 5.86 V at programming/erasing voltage 16 V. Highly stable memory retention characteristics, after 108 s reduction in drain current of less than 0.5 order. In addition, excellent flexibility maintain memory performance after 2.7 % of strain applied.