Large-Area MoS2 via Colloidal Nanosheet Ink for Integrated Memtransistor

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dc.contributor.authorNguyen, Duc Anhko
dc.contributor.authorPark, Dae Youngko
dc.contributor.authorDuong, Ngoc Thanhko
dc.contributor.authorLee, Kang-Nyeoungko
dc.contributor.authorIm, Hyunsikko
dc.contributor.authorYang, Heejunko
dc.contributor.authorJeong, Mun Seokko
dc.date.accessioned2021-11-17T06:41:50Z-
dc.date.available2021-11-17T06:41:50Z-
dc.date.created2021-09-23-
dc.date.created2021-09-23-
dc.date.issued2021-11-
dc.identifier.citationSMALL METHODS, v.5, no.11-
dc.identifier.issn2366-9608-
dc.identifier.urihttp://hdl.handle.net/10203/289202-
dc.description.abstract2D transition metal dichalcogenides (TMDs) exhibit intriguing properties for applications in optoelectronics and electronics, among which memtransistors received extensive attention as multifunctional devices. For practical applications of 2D TMDs, large-area fabrication of the materials via reliable processes, which is in trade-off with their quality, has been a long-standing issue. Here, a simple and effective way is proposed to fabricate large-area and high-quality molybdenum disulfide thin films using MoS2 colloidal ink through a spray coating, followed by a postsulfurization process. High-quality MoS2 thin films exhibit excellent optical and electrical properties that can be utilized in field-effect transistors (FETs) and memtransistor arrays. The MoS2 FETs show an average on/off ratio of 5 x 10(6) and a high electron mobility of 10.34 cm(2) V-1 s(-1), which can be understood by the healing of sulfur vacancies, recrystallization, and the removal of the carbon contamination of the MoS2. These MoS2-based memtransistors present stable operations with a high switching ratio tuned by back gate and light illumination, which is promising for multiple-levels memory and complex neuromorphic computing. This study demonstrates a new strategy to fabricate 2D TMDs with large-area and high quality for integrated optoelectronic and memory device applications.-
dc.languageEnglish-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.titleLarge-Area MoS2 via Colloidal Nanosheet Ink for Integrated Memtransistor-
dc.typeArticle-
dc.identifier.wosid000696726900001-
dc.identifier.scopusid2-s2.0-85114992240-
dc.type.rimsART-
dc.citation.volume5-
dc.citation.issue11-
dc.citation.publicationnameSMALL METHODS-
dc.identifier.doi10.1002/smtd.202100558-
dc.contributor.localauthorYang, Heejun-
dc.contributor.nonIdAuthorNguyen, Duc Anh-
dc.contributor.nonIdAuthorPark, Dae Young-
dc.contributor.nonIdAuthorDuong, Ngoc Thanh-
dc.contributor.nonIdAuthorLee, Kang-Nyeoung-
dc.contributor.nonIdAuthorIm, Hyunsik-
dc.contributor.nonIdAuthorJeong, Mun Seok-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorcolloidal syntheses-
dc.subject.keywordAuthorhigh electron mobility-
dc.subject.keywordAuthorlarge-area-
dc.subject.keywordAuthormemtransistors-
dc.subject.keywordAuthormolybdenum disulfide-
dc.subject.keywordAuthoroptoelectronics-
dc.subject.keywordPlusFEW-LAYER MOS2-
dc.subject.keywordPlusATOMIC LAYERS-
dc.subject.keywordPlusPHASE GROWTH-
dc.subject.keywordPlusCVD GROWTH-
dc.subject.keywordPlusMONOLAYER-
dc.subject.keywordPlusWS2-
dc.subject.keywordPlusDEPOSITION-
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