DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Dae-Woong | ko |
dc.contributor.author | Utomo, Dzuhri Radityo | ko |
dc.contributor.author | Yun, Byeonghun | ko |
dc.contributor.author | Mahmood, Hafiz Usman | ko |
dc.contributor.author | Hong, Jong-Phil | ko |
dc.contributor.author | Lee, Sang-Gug | ko |
dc.date.accessioned | 2021-11-09T06:42:17Z | - |
dc.date.available | 2021-11-09T06:42:17Z | - |
dc.date.created | 2021-11-09 | - |
dc.date.created | 2021-11-09 | - |
dc.date.created | 2021-11-09 | - |
dc.date.created | 2021-11-09 | - |
dc.date.issued | 2021-11 | - |
dc.identifier.citation | IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.56, no.11, pp.3388 - 3398 | - |
dc.identifier.issn | 0018-9200 | - |
dc.identifier.uri | http://hdl.handle.net/10203/288967 | - |
dc.description.abstract | This article reports the concept of a double maximum achievable gain (double-G(max)) core for the implementation of sub-terahertz high-gain amplifier design. The double-G(max) core is a G(max) core that adopts another linear, lossless, and reciprocal network that satisfies the G(max) condition onto an even number of cascaded transistor-level G(max) cores. It is shown that the double-G(max) core, due to its regenerative nature, can achieve much higher gain per stage than that of the same number of cascaded G(max) cores while satisfying the unconditional stability. Implemented in a 65-nm CMOS process, by adopting the proposed double-G(max) core, 247- and 272-GHz two-stage amplifiers achieve the peak gain of 18 and 15 dB, the gain per stage of 9 and 7.5 dB, and the PAE of 4.44% and 2.37%, respectively, while dissipating 21.5 mW. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Design of High-Gain Sub-THz Regenerative Amplifiers Based on Double-G(max) Gain Boosting Technique | - |
dc.type | Article | - |
dc.identifier.wosid | 000711641100020 | - |
dc.identifier.scopusid | 2-s2.0-85111074131 | - |
dc.type.rims | ART | - |
dc.citation.volume | 56 | - |
dc.citation.issue | 11 | - |
dc.citation.beginningpage | 3388 | - |
dc.citation.endingpage | 3398 | - |
dc.citation.publicationname | IEEE JOURNAL OF SOLID-STATE CIRCUITS | - |
dc.identifier.doi | 10.1109/JSSC.2021.3092168 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Lee, Sang-Gug | - |
dc.contributor.nonIdAuthor | Utomo, Dzuhri Radityo | - |
dc.contributor.nonIdAuthor | Hong, Jong-Phil | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Amplifier | - |
dc.subject.keywordAuthor | CMOS | - |
dc.subject.keywordAuthor | double-G(max) | - |
dc.subject.keywordAuthor | gain boosting | - |
dc.subject.keywordAuthor | maximum achievable gain (G(max)) | - |
dc.subject.keywordAuthor | mm-wave | - |
dc.subject.keywordAuthor | terahertz (THz) | - |
dc.subject.keywordPlus | 65-NM CMOS | - |
dc.subject.keywordPlus | POWER GAIN | - |
dc.subject.keywordPlus | TERAHERTZ SPECTROSCOPY | - |
dc.subject.keywordPlus | GHZ AMPLIFIER | - |
dc.subject.keywordPlus | BAND | - |
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