DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeong, Jaejoong | ko |
dc.contributor.author | Kim, Min Ju | ko |
dc.contributor.author | Hwang, Wan Sik | ko |
dc.contributor.author | Cho, Byung Jin | ko |
dc.date.accessioned | 2021-10-15T00:30:10Z | - |
dc.date.available | 2021-10-15T00:30:10Z | - |
dc.date.created | 2021-08-24 | - |
dc.date.created | 2021-08-24 | - |
dc.date.created | 2021-08-24 | - |
dc.date.created | 2021-08-24 | - |
dc.date.created | 2021-08-24 | - |
dc.date.issued | 2021-10 | - |
dc.identifier.citation | ADVANCED ELECTRONIC MATERIALS, v.7, no.10, pp.2100375 | - |
dc.identifier.issn | 2199-160X | - |
dc.identifier.uri | http://hdl.handle.net/10203/288197 | - |
dc.description.abstract | One of the essential components in this era of the Internet of Things (IoT) and wearable technologies, is a flexible and high performance resistive random access memory (ReRAM) device. In this paper, the authors propose a new copolymer-based ReRAM device that is realized using an initiated chemical vapor deposition (iCVD) process. The 7-nm-thick copolymer ReRAM device exhibits endurance properties as high as 10(5) and switching power as low as 438 mu W. The strong endurance of the copolymer-based ReRAM device originates from the properties of the robust poly-1,3,5-trivinyl-trimethyl-cyclotrisiloxane dielectric film, while its low on-current at the operating voltage is attributed to the properties of the poly-2-hydroxyethyl methacrylate dielectric with the Al electrode. The proposed ReRAM also has the additional advantage of forming-free switching characteristics. | - |
dc.language | English | - |
dc.publisher | WILEY | - |
dc.title | Copolymer-Based Flexible Resistive Random Access Memory Prepared by Initiated Chemical Vapor Deposition Process | - |
dc.type | Article | - |
dc.identifier.wosid | 000686140500001 | - |
dc.identifier.scopusid | 2-s2.0-85112778200 | - |
dc.type.rims | ART | - |
dc.citation.volume | 7 | - |
dc.citation.issue | 10 | - |
dc.citation.beginningpage | 2100375 | - |
dc.citation.publicationname | ADVANCED ELECTRONIC MATERIALS | - |
dc.identifier.doi | 10.1002/aelm.202100375 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Kim, Min Ju | - |
dc.contributor.nonIdAuthor | Hwang, Wan Sik | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | copolymers | - |
dc.subject.keywordAuthor | initiated chemical vapor deposition | - |
dc.subject.keywordAuthor | low power | - |
dc.subject.keywordAuthor | resistive random access memory | - |
dc.subject.keywordAuthor | soft electronics | - |
dc.subject.keywordPlus | MEMRISTIVE DEVICES | - |
dc.subject.keywordPlus | POLYMER | - |
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