A 28-nm 10-b 2.2-GS/s 18.2-mW Relative-Prime Time-Interleaved Sub-Ranging SAR ADC With On-Chip Background Skew Calibration

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dc.contributor.authorChang, Dong-Jinko
dc.contributor.authorChoi, Michaelko
dc.contributor.authorRyu, Seung-Takko
dc.date.accessioned2021-09-26T01:30:41Z-
dc.date.available2021-09-26T01:30:41Z-
dc.date.created2021-09-24-
dc.date.created2021-09-24-
dc.date.created2021-09-24-
dc.date.created2021-09-24-
dc.date.issued2021-09-
dc.identifier.citationIEEE JOURNAL OF SOLID-STATE CIRCUITS, v.56, no.9, pp.2691 - 2700-
dc.identifier.issn0018-9200-
dc.identifier.urihttp://hdl.handle.net/10203/287861-
dc.description.abstractThis article presents a relative-prime-based time-interleaved (RP TI) sub-ranging successive-approximation register (SAR) analog-to-digital converter (ADC) with on-chip background skew calibration. The proposed calibration aligns the sampling time of every fine ADC (F-ADC) to that of a particular coarse ADC (C-ADC) that works as a reference ADC. To avoid the unwanted calibration tone from the reference ADC, the C-ADC is also time-interleaved to make all samples undergo the same kick back. By setting the numbers of the time-interleaved channels of the C-ADCs and F-ADCs in a relative-prime relationship, every C-ADC can be evenly shared by every F-ADC; thus, the timing skews between the interleaved sub-ADCs are calibrated by adjusting the sampling edges of every F-ADC to the particular C-ADC working as a reference ADC. An 18-channel TI 10-bit 2.2-GS/s SAR ADC was implemented as a prototype with 28-nm CMOS. Owing to the proposed on-chip background skew calibration, the peak tone by skew was reduced by 23 dB from -40 to -63 dB, which corresponds to the residual skew reduction from 1.6 ps to 113 fs near the Nyquist input. Thus, the prototype ADC achieved a spurious free dynamic range (SFDR) over 52.8 dB and a signal-to-noise-and-distortion ratio (SNDR) over 44.9 dB with 18.2-mW power consumption, which leads to a Walden figure-of-merit (FoM) of 57.8 fJ/conversion-step.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleA 28-nm 10-b 2.2-GS/s 18.2-mW Relative-Prime Time-Interleaved Sub-Ranging SAR ADC With On-Chip Background Skew Calibration-
dc.typeArticle-
dc.identifier.wosid000690441300009-
dc.identifier.scopusid2-s2.0-85105115219-
dc.type.rimsART-
dc.citation.volume56-
dc.citation.issue9-
dc.citation.beginningpage2691-
dc.citation.endingpage2700-
dc.citation.publicationnameIEEE JOURNAL OF SOLID-STATE CIRCUITS-
dc.identifier.doi10.1109/JSSC.2021.3073976-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorRyu, Seung-Tak-
dc.contributor.nonIdAuthorChoi, Michael-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorCalibration-
dc.subject.keywordAuthorTiming-
dc.subject.keywordAuthorComputer architecture-
dc.subject.keywordAuthorTime-frequency analysis-
dc.subject.keywordAuthorRedundancy-
dc.subject.keywordAuthorPrototypes-
dc.subject.keywordAuthorLinearity-
dc.subject.keywordAuthorAnalog-to-digital converter (ADC)-
dc.subject.keywordAuthordigital background calibration-
dc.subject.keywordAuthorsub-ranging architecture-
dc.subject.keywordAuthortime-interleaved (TI) ADC-
dc.subject.keywordAuthortiming-skew mismatch-
dc.subject.keywordPlusDB SNDR-
dc.subject.keywordPlusNM CMOS-
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