Racetrack memory based on current-induced motion of topological Bloch lines

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A magnetic Bloch line (BL) is a nanoscale topological defect with a nontrivial topological charge. Herein, we propose a novel memory that utilizes current-driven BL motion. We demonstrate that it is possible to write and shift BLs using a spin-transfer-torque scheme. The writing efficiency and shifting velocity of the BL-based racetrack memory are better than or comparable to those of domain wall (DW)-based racetrack memory. Moreover, the current-driven BL motion is more robust against defects than the DW motion, suggesting that BL-motion-based memory can serve as a next-generation memory beyond the DW-motion-based racetrack memory.
Publisher
IOP PUBLISHING LTD
Issue Date
2021-10
Language
English
Article Type
Article
Citation

APPLIED PHYSICS EXPRESS, v.14, no.10

ISSN
1882-0778
DOI
10.35848/1882-0786/ac2242
URI
http://hdl.handle.net/10203/287851
Appears in Collection
EE-Journal Papers(저널논문)PH-Journal Papers(저널논문)
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