Theory of nonradiative transitions of hot carriers in Si/SiO2 nanocrystals

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dc.contributor.authorPoddubny, A.N.ko
dc.contributor.authorMoskalenko, Andreyko
dc.contributor.authorProkofiev, A.A.ko
dc.contributor.authorGoupalov, S.V.ko
dc.contributor.authorYassievich, I.N.ko
dc.date.accessioned2021-08-30T08:50:09Z-
dc.date.available2021-08-30T08:50:09Z-
dc.date.created2021-08-30-
dc.date.issued2011-03-
dc.identifier.citationPHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, v.8, no.3, pp.985 - 990-
dc.identifier.issn1610-1642-
dc.identifier.urihttp://hdl.handle.net/10203/287501-
dc.description.abstractEnergy relaxation of hot electrons and holes confined in silicon nanocrystals embedded in SiO2 matrix is studied theoretically. Phonon-assisted transitions rates strongly depend on nanocrystal diameter ranging from 108 s-1 to 10-12 s-1. The Auger-like transitions are found to be considerably faster and lead to rapid energy exchange within electron-hole pair.-
dc.languageEnglish-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.titleTheory of nonradiative transitions of hot carriers in Si/SiO2 nanocrystals-
dc.typeArticle-
dc.identifier.scopusid2-s2.0-79952635235-
dc.type.rimsART-
dc.citation.volume8-
dc.citation.issue3-
dc.citation.beginningpage985-
dc.citation.endingpage990-
dc.citation.publicationnamePHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS-
dc.identifier.doi10.1002/pssc.201000407-
dc.contributor.localauthorMoskalenko, Andrey-
dc.contributor.nonIdAuthorPoddubny, A.N.-
dc.contributor.nonIdAuthorProkofiev, A.A.-
dc.contributor.nonIdAuthorGoupalov, S.V.-
dc.contributor.nonIdAuthorYassievich, I.N.-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
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