DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Hamin | ko |
dc.contributor.author | Oh, Dong Sik | ko |
dc.contributor.author | Hong, Woonggi | ko |
dc.contributor.author | Kang, Juyeon | ko |
dc.contributor.author | Lee, Geon-Beom | ko |
dc.contributor.author | Shin, Gwang Hyuk | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.contributor.author | Im, Sung Gap | ko |
dc.contributor.author | Choi, Sung-Yool | ko |
dc.date.accessioned | 2021-08-09T07:10:14Z | - |
dc.date.available | 2021-08-09T07:10:14Z | - |
dc.date.created | 2021-07-13 | - |
dc.date.created | 2021-07-13 | - |
dc.date.created | 2021-07-13 | - |
dc.date.issued | 2021-07 | - |
dc.identifier.citation | ADVANCED MATERIALS INTERFACES, v.8, no.14, pp.2100599 | - |
dc.identifier.issn | 2196-7350 | - |
dc.identifier.uri | http://hdl.handle.net/10203/287090 | - |
dc.description.abstract | MoS2 thin-film transistors (TFTs) have been widely studied for use as driving TFTs of active-matrix displays considering their outstanding electrical advantages such as high mobility and high on/off current ratio. However, due to the atomically thin nature of MoS2, the device performance of MoS2 TFTs suffers from trap sites at the interface. In this study, a hybrid gate dielectric based on an interface engineering strategy using poly(1,3,5-trivinyl-1,3,5-trimethyl cyclotrisiloxane) (pV3D3) via initiated chemical vapor deposition is investigated to enhance the negative bias illumination stress (NBIS) stability of MoS2 TFTs. Compared to a single oxide dielectric layer (Al2O3), a hybrid dielectric layer (pV3D3/Al2O3) exhibits decreased threshold voltage shift under NBIS by reducing functional groups, such as hydroxyl (OH-) group, which act as charge trapping sites at the interface between the MoS2 channel and the gate dielectric. It is confirmed by quantitative analysis using the stretched-exponential model. Tau (tau), one of the modeling parameters in the stretched-exponential model, decreases from 210 to 120 s, indicating the improvement in stability. Furthermore, in a low-frequency noise (1/f) measurement, hybrid-dielectric-based TFTs show an order of magnitude lower noise power spectral density (S-ID/I-D(2)) than single-oxide-dielectric-based TFTs. | - |
dc.language | English | - |
dc.publisher | WILEY | - |
dc.title | Hybrid Gate Dielectric of MoS2 Transistors for Enhanced Photo-Electronic Stability | - |
dc.type | Article | - |
dc.identifier.wosid | 000667136900001 | - |
dc.identifier.scopusid | 2-s2.0-85108977132 | - |
dc.type.rims | ART | - |
dc.citation.volume | 8 | - |
dc.citation.issue | 14 | - |
dc.citation.beginningpage | 2100599 | - |
dc.citation.publicationname | ADVANCED MATERIALS INTERFACES | - |
dc.identifier.doi | 10.1002/admi.202100599 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.localauthor | Im, Sung Gap | - |
dc.contributor.localauthor | Choi, Sung-Yool | - |
dc.contributor.nonIdAuthor | Park, Hamin | - |
dc.contributor.nonIdAuthor | Oh, Dong Sik | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | hybrid gate dielectric | - |
dc.subject.keywordAuthor | interface engineering | - |
dc.subject.keywordAuthor | low-frequency noise | - |
dc.subject.keywordAuthor | MoS | - |
dc.subject.keywordAuthor | (2) transistor | - |
dc.subject.keywordAuthor | negative bias illumination stress | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | LOW-FREQUENCY NOISE | - |
dc.subject.keywordPlus | HEXAGONAL BORON-NITRIDE | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | HIGH-MOBILITY | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | TFTS | - |
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