DC Field | Value | Language |
---|---|---|
dc.contributor.author | Bae, Hagyoul | ko |
dc.contributor.author | Lee, Geon Beom | ko |
dc.contributor.author | Hur, Jae | ko |
dc.contributor.author | Park, Jun Young | ko |
dc.contributor.author | Kim, Da Jin | ko |
dc.contributor.author | Kim, Myung Su | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2021-08-04T02:10:09Z | - |
dc.date.available | 2021-08-04T02:10:09Z | - |
dc.date.created | 2021-07-30 | - |
dc.date.created | 2021-07-30 | - |
dc.date.created | 2021-07-30 | - |
dc.date.created | 2021-07-30 | - |
dc.date.issued | 2021-07 | - |
dc.identifier.citation | MICROMACHINES, v.12, no.8 | - |
dc.identifier.issn | 2072-666X | - |
dc.identifier.uri | http://hdl.handle.net/10203/287022 | - |
dc.description.abstract | For the first time, a novel germanium (Ge) bi-stable resistor (biristor) with a vertical pillar structure was implemented on a bulk substrate. The basic structure of the Ge pillar-typed biristor is a p-n-p bipolar junction transistor (BJT) with an open base (floating), which is equivalent to a gateless p-channel metal oxide semiconductor field-effect transistor (MOSFET). In the pillar formation, we adopted an amorphous carbon layer to protect the Ge surface from both physical and chemical damage by subsequent processes. A hysteric current-voltage (I-V) characteristic, which results in a sustainable binary state, i.e., high current and low current at the same voltage, can be utilized for a memory device. A lower operating voltage with high current was achieved, compared to a Si biristor, due to the low energy bandgap of pure Ge. | - |
dc.language | English | - |
dc.publisher | MDPI | - |
dc.title | Gateless and Capacitorless Germanium Biristor with a Vertical Pillar Structure | - |
dc.type | Article | - |
dc.identifier.wosid | 000689340200001 | - |
dc.identifier.scopusid | 2-s2.0-85112624131 | - |
dc.type.rims | ART | - |
dc.citation.volume | 12 | - |
dc.citation.issue | 8 | - |
dc.citation.publicationname | MICROMACHINES | - |
dc.identifier.doi | 10.3390/mi12080899 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Park, Jun Young | - |
dc.description.isOpenAccess | Y | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Ge biristor | - |
dc.subject.keywordAuthor | vertical memory | - |
dc.subject.keywordAuthor | amorphous carbon layer | - |
dc.subject.keywordAuthor | gateless structure | - |
dc.subject.keywordAuthor | capacitorless structure | - |
dc.subject.keywordAuthor | DRAM | - |
dc.subject.keywordPlus | DRAM CELL | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | BREAKDOWN | - |
dc.subject.keywordPlus | IMPACT | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.