Transferable, flexible white light-emitting diodes of GaN p-n junction microcrystals fabricated by remote epitaxy

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The remote epitaxy of GaN p-n homojunction microcrystals (mu Cs) is demonstrated for fabricating transferable, flexible white light-emitting diodes (WLEDs). The GaN p-n junction mu Cs are randomly grown on graphene-coated Al2O3(0001), which are then delaminated for mass-transfer onto conducting copper tape. The mu Cs-LED shows electrical rectification and white electroluminescence (EL) emission. The mu Cs-WLED exhibits reliable LED performances after repetitive bending deformations and cycling temperature environments. Based on the transferability, the mu Cs-WLEDs are patterned and assembled to matrix arrays, which exhibit homogeneous, reliable performances even at a bent form. We discuss that the origin of white EL emission is mixing of blue and yellow-red EL emissions from p-GaN and n-GaN sides, respectively, based on photoluminescence spectroscopic measurements. This study opens a way of fabricating the transferable, flexible, and modular light panels through remote epitaxy.
Publisher
ELSEVIER
Issue Date
2021-08
Language
English
Article Type
Article
Citation

NANO ENERGY, v.86

ISSN
2211-2855
DOI
10.1016/j.nanoen.2021.106075
URI
http://hdl.handle.net/10203/286891
Appears in Collection
MS-Journal Papers(저널논문)
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