DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Minsu | ko |
dc.contributor.author | Jeong, Yangho | ko |
dc.contributor.author | Kim, Hyung Suk | ko |
dc.contributor.author | Lee, Woochan | ko |
dc.contributor.author | Nam, Sang-Hyeon | ko |
dc.contributor.author | Lee, Sukki | ko |
dc.contributor.author | Yoon, Hyewon | ko |
dc.contributor.author | Kim, Jin | ko |
dc.contributor.author | Yoo, Seunghyup | ko |
dc.contributor.author | Jeon, Seokwoo | ko |
dc.date.accessioned | 2021-07-21T04:30:14Z | - |
dc.date.available | 2021-07-21T04:30:14Z | - |
dc.date.created | 2021-05-25 | - |
dc.date.issued | 2021-07 | - |
dc.identifier.citation | ADVANCED FUNCTIONAL MATERIALS, v.31, no.29, pp.2102741 | - |
dc.identifier.issn | 1616-301X | - |
dc.identifier.uri | http://hdl.handle.net/10203/286784 | - |
dc.description.abstract | Graphene quantum dots (GQDs) have attracted great attention as next-generation luminescent nanomaterials due to the advantages of a low-cost process, low toxicity, and unique photoluminescence (PL). However, in the solid-state, the strong pi-pi stacking interactions between the basal planes of GQDs lead to aggregation-caused PL quenching (ACQ), which impedes practical application to light-emitting devices. Here, surface functionalized GQDs (F-GQDs) by polyhedral oligomeric silsesquioxane (POSS), poly(ethylene glycol) (PEG), and hexadecylamine (HDA) to reduce pi-pi stacking-induced ACQ is presented. The POSS-, PEG-, and HDA-functionalized GQDs show a significant enhancement in PL intensity compared to bare GQDs by 9.5-, 9.0-, and 5.6-fold in spin-coated film form and by 8.3-, 7.2-, and 3.4-fold in drop-casted film form, respectively. Experimental results and molecular dynamics simulations indicate that steric hindrance of the functionalization agent contributes to reducing the pi-pi stacking between adjacent GQDs and thereby enabling quenching-resistant PL in the solid-state. Moreover, the GQD-based white light-emitting diodes fabricated by mounting HDA-GQDs on a UV-LED chip exhibits efficient down-conversion for white light emission with a high color rendering index of 86.2 and a correlated-color temperature of 5612 K at Commission Internationale de l'eclairage coordinates of (0.333, 0.359). | - |
dc.language | English | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | Quenching-Resistant Solid-State Photoluminescence of Graphene Quantum Dots: Reduction of pi-pi Stacking by Surface Functionalization with POSS, PEG, and HDA | - |
dc.type | Article | - |
dc.identifier.wosid | 000647486100001 | - |
dc.identifier.scopusid | 2-s2.0-85105167897 | - |
dc.type.rims | ART | - |
dc.citation.volume | 31 | - |
dc.citation.issue | 29 | - |
dc.citation.beginningpage | 2102741 | - |
dc.citation.publicationname | ADVANCED FUNCTIONAL MATERIALS | - |
dc.identifier.doi | 10.1002/adfm.202102741 | - |
dc.contributor.localauthor | Yoo, Seunghyup | - |
dc.contributor.localauthor | Jeon, Seokwoo | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | aggregation& | - |
dc.subject.keywordAuthor | #8208 | - |
dc.subject.keywordAuthor | caused quenching | - |
dc.subject.keywordAuthor | electroluminescence | - |
dc.subject.keywordAuthor | graphene quantum dots | - |
dc.subject.keywordAuthor | photoluminescence | - |
dc.subject.keywordAuthor | surface functionalization | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | MICROFLUIDIC DEVICE | - |
dc.subject.keywordPlus | COMPOSITE | - |
dc.subject.keywordPlus | EFFICIENT | - |
dc.subject.keywordPlus | EMISSION | - |
dc.subject.keywordPlus | ENERGY | - |
dc.subject.keywordPlus | CHEMISTRY | - |
dc.subject.keywordPlus | CARBON | - |
dc.subject.keywordPlus | BLUE | - |
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