DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jin, Hyeok Jun | ko |
dc.contributor.author | Lee, Khang June | ko |
dc.contributor.author | Park, Cheol Min | ko |
dc.contributor.author | Shin, Gwang Hyuk | ko |
dc.contributor.author | Hong, Woonggi | ko |
dc.contributor.author | Oh, Dongsik | ko |
dc.contributor.author | Choi, Sung-Yool | ko |
dc.date.accessioned | 2021-07-06T07:10:17Z | - |
dc.date.available | 2021-07-06T07:10:17Z | - |
dc.date.created | 2021-06-30 | - |
dc.date.created | 2021-06-30 | - |
dc.date.issued | 2021-04 | - |
dc.identifier.citation | JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.54, no.14, pp.145301 | - |
dc.identifier.issn | 0022-3727 | - |
dc.identifier.uri | http://hdl.handle.net/10203/286439 | - |
dc.description.abstract | Two-dimensional (2D) materials present various extraordinary properties that are advantageous in optoelectronic devices with atomically thin nature. Despite their excellent light-matter interaction, a low optical absorption that is proportional to thickness is considered to be a major limitation. In this study, a gap-mode plasmon structure is applied to the Schottky junction of Au-MoS2 to compensate for its low absorption. The magnitude of the gap-mode plasmon is generally known to be inversely proportional to the gap distance between two metal nanostructures; hence, an atomically thin 2D material can be considered to be a good candidate for a gap spacer. Owing to the gap-mode plasmon structure, the photoresponsivity of the proposed device is enhanced by approximately 11.6 times from 25 to 290 A W-1 under 1 nW of laser power, without photoresponse time degradation. Two operation modes, named the photovoltaic and the photoconductive mode, are also observed through different response times; these present different carrier transport mechanisms depending on the existence of bias voltage. | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Atomically thin Schottky junction with a gap-mode plasmon for enhanced photoresponsivity in MoS2-based photodetectors | - |
dc.type | Article | - |
dc.identifier.wosid | 000612930800001 | - |
dc.identifier.scopusid | 2-s2.0-85100985434 | - |
dc.type.rims | ART | - |
dc.citation.volume | 54 | - |
dc.citation.issue | 14 | - |
dc.citation.beginningpage | 145301 | - |
dc.citation.publicationname | JOURNAL OF PHYSICS D-APPLIED PHYSICS | - |
dc.identifier.doi | 10.1088/1361-6463/abd6ac | - |
dc.contributor.localauthor | Choi, Sung-Yool | - |
dc.contributor.nonIdAuthor | Oh, Dongsik | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | atomically thin Schottky junction | - |
dc.subject.keywordAuthor | gap-mode plasmons | - |
dc.subject.keywordAuthor | MoS2 | - |
dc.subject.keywordAuthor | photodetectors | - |
dc.subject.keywordAuthor | ultrahigh photoresponsivity | - |
dc.subject.keywordPlus | MOS2 | - |
dc.subject.keywordPlus | GRAPHENE | - |
dc.subject.keywordPlus | BULK | - |
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