Liquid cooling module incorporating a metal foam and fin hybrid structure for high power insulated gate bipolar transistors (IGBTs)

Cited 10 time in webofscience Cited 0 time in scopus
  • Hit : 126
  • Download : 0
We propose a liquid cooling system incorporating a porous medium combined to the multiscale flow manifold. Specifically, this work compares two types of porous media by varying the porosity: the first type only includes a metal foam layer, and the second incorporates an additional circular pin-fin array within the metal foam. The thermohydraulic performances of each type such as the average junction temperature, temperature deviation, flow were investigated using both numerical and experimental approaches. Due to the influence of the additional thermal conductivity matrix by fin structure integration, the second configuration (metal-foam and pin-fin hybrid type) provides a higher thermal performance compared to the first one. The suggested cooling solution with the second configuration could provide a very low thermal resistance (similar to 0.185 K/W) with the pressure drop range between 5 and 15 kPa, which surpasses the performances of the previous-reported direct liquid cooling solutions such as the jet impingement, turbulator, and microchannel. This work will help develop high performance and compact cooling solutions for high power semiconductor applications such as an insulated gate bipolar transistor (IGBT) or a microprocessor.
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Issue Date
2020-06
Language
English
Article Type
Article
Citation

APPLIED THERMAL ENGINEERING, v.173

ISSN
1359-4311
DOI
10.1016/j.applthermaleng.2020.115230
URI
http://hdl.handle.net/10203/286197
Appears in Collection
ME-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 10 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0