Wideband Phase-Compensated VGA with PMOS Switch in 40-nm CMOS for 120-GHz Band

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dc.contributor.authorJang, Tae Hwanko
dc.contributor.authorKim, Seung Hunko
dc.contributor.authorByeon, Chul Wooko
dc.contributor.authorPark, Chul Soonko
dc.date.accessioned2021-06-22T00:30:51Z-
dc.date.available2021-06-22T00:30:51Z-
dc.date.created2021-05-11-
dc.date.created2021-05-11-
dc.date.issued2021-05-
dc.identifier.citationJOURNAL OF INFRARED MILLIMETER AND TERAHERTZ WAVES, v.42, no.5, pp.514 - 524-
dc.identifier.issn1866-6892-
dc.identifier.urihttp://hdl.handle.net/10203/286055-
dc.description.abstractThis paper presents a 120-GHz wideband phase-compensated variable gain amplifier (VGA) with a p-type metal-oxide-semiconductor (PMOS) switch using a 40-nm CMOS process. By applying a PMOS switch to the common source (CS) amplifier, the gain of the CS amplifier can be controlled by as much as 6.1 dB with 2 degrees phase variations in 15.1-GHz bandwidth ranging from 100.9 to 115 GHz. The measured gain and 3-dB bandwidth of the VGA are 19.1 dB and 33.8 GHz for high-gain state, and 13 dB and 44.2 GHz for low gain state, respectively. Meanwhile, the DC power consumption in the high-gain state is 45 mW, and the OP1dB is -2.7 dBm.-
dc.languageEnglish-
dc.publisherSPRINGER-
dc.titleWideband Phase-Compensated VGA with PMOS Switch in 40-nm CMOS for 120-GHz Band-
dc.typeArticle-
dc.identifier.wosid000640844500001-
dc.identifier.scopusid2-s2.0-85104866953-
dc.type.rimsART-
dc.citation.volume42-
dc.citation.issue5-
dc.citation.beginningpage514-
dc.citation.endingpage524-
dc.citation.publicationnameJOURNAL OF INFRARED MILLIMETER AND TERAHERTZ WAVES-
dc.identifier.doi10.1007/s10762-021-00794-7-
dc.contributor.localauthorPark, Chul Soon-
dc.contributor.nonIdAuthorByeon, Chul Woo-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorCMOS-
dc.subject.keywordAuthor120 GHz-
dc.subject.keywordAuthorVariable gain amplifier-
dc.subject.keywordAuthorPMOS-
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