First-Principles Study of Vertical Van der Waals Heterojunction-Based Tunnel Field-Effect Transistors
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 이주호 | ko |
| dc.contributor.author | 김용훈 | ko |
| dc.date.accessioned | 2021-06-17T07:31:35Z | - |
| dc.date.available | 2021-06-17T07:31:35Z | - |
| dc.date.created | 2021-06-17 | - |
| dc.date.issued | 2021-01-28 | - |
| dc.identifier.citation | 제 28회 한국반도체학술대회 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/285994 | - |
| dc.language | English | - |
| dc.publisher | 한국물리학회 반도체분과회 | - |
| dc.title | First-Principles Study of Vertical Van der Waals Heterojunction-Based Tunnel Field-Effect Transistors | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 제 28회 한국반도체학술대회 | - |
| dc.identifier.conferencecountry | KO | - |
| dc.identifier.conferencelocation | 온라인 | - |
| dc.contributor.localauthor | 김용훈 | - |
| dc.contributor.nonIdAuthor | 이주호 | - |
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