학위논문(석사) - 한국과학기술원 : 전기및전자공학부, 2020.8,[iii, 37 p. :]
Resistive Random Access Memory (RRAM)▼apolymer▼acopolymer▼ainitated Chemical Vapor Deposition (iCVD)▼a2-Hydroxyethyl Methacrylate (HEMA)▼a1,3,5-trivinyl-1,3,5-trimethylcyclotrisiloxane (V3D3); 저항 변화 메모리(RRAM)▼a고분자▼a공중합체▼a개시제를 이용한 화학 기상 증착 공정(iCVD)▼a2-Hydroxyethyl Methacrylate (HEMA)▼a1,3,5-trivinyl-1,3,5-trimethylcyclotrisiloxane (V3D3)
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