Current regulation through change of semiconductor layer carrier injection in metal-oxide semiconductor-insulator-metal thin film rectifier diode

Abstract

Various studies have been conducted on thin-film metal-insulator-semiconductor-metal diodes using characteristics that enable carrier injection of semiconductors into insulators. The existing metal-insulator-metal diode has a problem in that it does not exhibit excellent rectifying properties, and in the case of a P-N diode, it is difficult to manufacture a P-type semiconductor. However, this diode has various advantages such as high rectification characteristics, low off current, and the use of semiconductor processes. However, no research has been conducted on the role of carrier injection in the semiconductor layer in these diodes. The purpose of this study was to analyze the effect of the semiconductor layer on the rectification characteristics of the device by changing the composition of the amorphous indium-gallium-zinc oxide. Through this, the current of the diode can be controlled by adjusting the amount of carriers due to oxygen defects, and this can be analyzed by the SCLC model.