학위논문(박사) - 한국과학기술원 : 조천식녹색교통대학원, 2019.2,[vi, 66 p. :]
through-silicon via (TSV)▼anonlinear Poisson’s equation▼ametal-oxide-semiconductor (MOS) capacitance▼akeep-out zone (KOZ)▼ainterface charge density (Dit)▼alateral nonuniformity (LNU); 실리콘 관통 전극▼a비선형 포아송 방정식▼a금속-산화물-반도체 커패시턴스▼a킵-아웃 존▼a계면 트랩 전하 밀도▼a측면 비 균일성
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