(A) study on atomic layer deposition-assisted oxide thin film diode and its application to wearable platform

Abstract

Rectifying diodes have been emerging as one of promising components for advanced functional devices including resistive random access memory and backplanes of active-matrix system. Among various types of diodes, metal-insulator-oxide semiconductor diodes have been extensively studied for their outstanding stability and rectifying characteristics. In this dissertation, we developed an ALD-assisted oxide thin film diode by interface engineering, and obtained high on/off ratio of ~ $10^8$, low off current density of $10^{-9} A/cm^2$ and good reliability. Also, we studied an exact mechanism of current flow through various chemical and electrical analysis. Furthermore, we utilized the diodes to demonstrate an active-matrix platform for a wearable electronic system. Consequently, a wearable active-matrix pressure sensor array based on a contact resistive sensor was successfully developed and characterized.