Reducing Carrier Density in Formamidinium Tin Perovskites and Its Beneficial Effects on Stability and Efficiency of Perovskite Solar Cells

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In Sn-based halide perovskite solar cells (PSCs), the oxidation of Sn2+ to Sn4+ under ambient air leads to unwanted p-type doping in the perovskite film, which is a main reason for increased background carrier density and low efficiency. Here, we find that the introduction of bromide into formamidinium tin iodide (CH(NH2)(2)SnI3, FASnI(3)) lattice significantly lowers the carrier density of perovskite absorber, which is thought to be a result of reduction of Sn vacancies. It reduces the leakage current of devices, increases recombination lifetime, and finally improves open-circuit voltage and fill factor of the resulting devices employing mesoporous TiO2 as an electron transport layer. Consequently, a high power conversion efficiency (PCE) of 5.5% is achieved with an average PCE of 5%, and after encapsulation the devices are highly stable over 1000 h under continuous one sun illumination including the ultraviolet region. This study suggests a simple approach for improving stability and efficiency in FASnI(3)-based PSCs.
Publisher
AMER CHEMICAL SOC
Issue Date
2018-01
Language
English
Article Type
Article
Citation

ACS ENERGY LETTERS, v.3, no.1, pp.46 - 53

ISSN
2380-8195
DOI
10.1021/acsenergylett.7b00976
URI
http://hdl.handle.net/10203/282746
Appears in Collection
CBE-Journal Papers(저널논문)
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