Tuning the charge transport properties of dicyanodistyrylbenzene derivatives by the number of fluorine substituents

Cited 6 time in webofscience Cited 0 time in scopus
  • Hit : 129
  • Download : 0
DC FieldValueLanguage
dc.contributor.authorKim, Hyeong-Juko
dc.contributor.authorKim, Jin Hongko
dc.contributor.authorSeo, Jangwonko
dc.contributor.authorJung, Jaehunko
dc.contributor.authorWhang, Dong Ryeolko
dc.contributor.authorPark, Soo Youngko
dc.date.accessioned2021-05-04T05:10:12Z-
dc.date.available2021-05-04T05:10:12Z-
dc.date.created2021-05-04-
dc.date.created2021-05-04-
dc.date.issued2016-06-
dc.identifier.citationSYNTHETIC METALS, v.216, pp.51 - 58-
dc.identifier.issn0379-6779-
dc.identifier.urihttp://hdl.handle.net/10203/282729-
dc.description.abstractThis work describes controlling charge transport properties of organic field-effect transistors (OFETs) with dicyanodistyrylbenzene-based organic semiconductors. Four fluorinated dicyanodistyrylbenzene derivatives (hTF1, hTF2, hTF3, and hTF5) with different degree of fluorination at the phenyl peripheries were synthesized and subjected to OFET devices. It was shown that the fluorination distinctly alters the polarity of charge transfer characteristics from p-type (hTF1), ambipolar (hTF2, hTF5), to n-type (hTF3). Systematic studies on photophysical, electrochemical, structural, and electronic properties revealed the fine tuning of the charge transport properties by the degree of fluorination. While p-type mobility of hTF1 was smaller than 0.01 cm(2)V(-1) s(-1), n-type mobility of hTF3 was as large as 0.7 cm(2)V(-1) s(-1). On the other hand, well-balanced ambipolar mobilities were achieved for both hTF2 and hTF5 (hole and electron mobilities were virtually equal to be 0.07 cm(2)V(-1) s(-1)). (C) 2016 Elsevier B.V. All rights reserved.-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE SA-
dc.titleTuning the charge transport properties of dicyanodistyrylbenzene derivatives by the number of fluorine substituents-
dc.typeArticle-
dc.identifier.wosid000376809800007-
dc.identifier.scopusid2-s2.0-84954285207-
dc.type.rimsART-
dc.citation.volume216-
dc.citation.beginningpage51-
dc.citation.endingpage58-
dc.citation.publicationnameSYNTHETIC METALS-
dc.identifier.doi10.1016/j.synthmet.2015.12.028-
dc.contributor.localauthorSeo, Jangwon-
dc.contributor.nonIdAuthorKim, Hyeong-Ju-
dc.contributor.nonIdAuthorKim, Jin Hong-
dc.contributor.nonIdAuthorJung, Jaehun-
dc.contributor.nonIdAuthorWhang, Dong Ryeol-
dc.contributor.nonIdAuthorPark, Soo Young-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle; Proceedings Paper-
dc.subject.keywordAuthorAmbipolar semiconductor-
dc.subject.keywordAuthorDicyanodistyrylbenzene-
dc.subject.keywordAuthorOrganic field-effect transistor-
dc.subject.keywordAuthorFluorination-
dc.subject.keywordAuthorMobility-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusTHIN-FILM TRANSISTORS-
dc.subject.keywordPlusORBITAL ENERGY-LEVELS-
dc.subject.keywordPlusORGANIC SEMICONDUCTORS-
dc.subject.keywordPlusHIGH-PERFORMANCE-
dc.subject.keywordPlusAMBIPOLAR-
dc.subject.keywordPlusELECTRON-
Appears in Collection
CBE-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 6 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0