Low-Frequency Noise Characteristics Under the OFF-State Stress
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Geon-Beom | ko |
| dc.contributor.author | Kim, Choong-Ki | ko |
| dc.contributor.author | Yoo, Min-Soo | ko |
| dc.contributor.author | Choi, Yang-Kyu | ko |
| dc.date.accessioned | 2021-03-26T01:52:41Z | - |
| dc.date.available | 2021-03-26T01:52:41Z | - |
| dc.date.created | 2020-10-13 | - |
| dc.date.issued | 2020-10 | - |
| dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.10, pp.4366 - 4371 | - |
| dc.identifier.issn | 0018-9383 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/281866 | - |
| dc.description.abstract | Low-frequency noise (LFN) characteristics under OFF-state stress (OSS), which degrade device performance, were investigated in n-channel MOSFETs. The power spectral density (PSD) was analyzed by investigating the LFN and the border traps located in the gate oxide were extracted along a depth direction perpendicular to the silicon (Si) channel surface. The holes generated by band-to-band tunneling (BTBT) in the overlap region between a drain and a gate were found to be more detrimental to device performance than channel hot-carriers created by impact ionization. | - |
| dc.language | English | - |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
| dc.title | Low-Frequency Noise Characteristics Under the OFF-State Stress | - |
| dc.type | Article | - |
| dc.identifier.wosid | 000572635400069 | - |
| dc.identifier.scopusid | 2-s2.0-85092197354 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 67 | - |
| dc.citation.issue | 10 | - |
| dc.citation.beginningpage | 4366 | - |
| dc.citation.endingpage | 4371 | - |
| dc.citation.publicationname | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
| dc.identifier.doi | 10.1109/TED.2020.3015445 | - |
| dc.contributor.localauthor | Choi, Yang-Kyu | - |
| dc.contributor.nonIdAuthor | Kim, Choong-Ki | - |
| dc.contributor.nonIdAuthor | Yoo, Min-Soo | - |
| dc.description.isOpenAccess | N | - |
| dc.type.journalArticle | Article | - |
| dc.subject.keywordAuthor | Stress | - |
| dc.subject.keywordAuthor | Logic gates | - |
| dc.subject.keywordAuthor | Degradation | - |
| dc.subject.keywordAuthor | Performance evaluation | - |
| dc.subject.keywordAuthor | Impact ionization | - |
| dc.subject.keywordAuthor | MOSFET | - |
| dc.subject.keywordAuthor | Tunneling | - |
| dc.subject.keywordAuthor | Band-to-band tunneling (BTBT) | - |
| dc.subject.keywordAuthor | border trap | - |
| dc.subject.keywordAuthor | impact ionization | - |
| dc.subject.keywordAuthor | low-frequencynoise (LFN) | - |
| dc.subject.keywordAuthor | MOSFET | - |
| dc.subject.keywordAuthor | OFF-state stress (OSS) | - |
| dc.subject.keywordPlus | INDUCED DRAIN LEAKAGE | - |
| dc.subject.keywordPlus | NMOS TRANSISTORS | - |
| dc.subject.keywordPlus | DEGRADATION | - |
| dc.subject.keywordPlus | FLUCTUATIONS | - |
| dc.subject.keywordPlus | MODEL | - |
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