Computational lithography using machine learning models

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dc.contributor.authorShin, Youngsooko
dc.date.accessioned2021-02-26T06:30:07Z-
dc.date.available2021-02-26T06:30:07Z-
dc.date.created2020-12-01-
dc.date.created2020-12-01-
dc.date.created2020-12-01-
dc.date.issued2021-02-
dc.identifier.citationIPSJ Transactions on System LSI Design Methodology, v.14, pp.2 - 10-
dc.identifier.issn1882-6687-
dc.identifier.urihttp://hdl.handle.net/10203/281048-
dc.description.abstractMachine learning models have been applied to a wide range of computational lithography applications since around 2010. They provide higher modeling capability, so their application allows modeling of higher accuracy. Many applications which are computationally expensive can take advantage of machine learning models, since a well trained model provides a quick estimation of outcome. This tutorial reviews a number of such computational lithography applications that have been using machine learning models. They include mask optimization with OPC (optical proximity correction) and EPC (etch proximity correction), assist features insertion and their printability check, lithography modeling with optical model and resist model, test patterns, and hotspot detection and correction.-
dc.languageEnglish-
dc.publisherInformation Processing Society of Japan-
dc.titleComputational lithography using machine learning models-
dc.typeArticle-
dc.identifier.scopusid2-s2.0-85102463653-
dc.type.rimsART-
dc.citation.volume14-
dc.citation.beginningpage2-
dc.citation.endingpage10-
dc.citation.publicationnameIPSJ Transactions on System LSI Design Methodology-
dc.identifier.doi10.2197/ipsjtsldm.14.2-
dc.contributor.localauthorShin, Youngsoo-
dc.description.isOpenAccessY-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorcomputational lithography-
dc.subject.keywordAuthoroptical proximity correction-
dc.subject.keywordAuthorassist features-
dc.subject.keywordAuthorlithography model-
dc.subject.keywordAuthorlithography test patterns-
dc.subject.keywordAuthorhotspot-
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