Origins of genuine Ohmic van der Waals contact between indium and MoS2

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dc.contributor.authorKim, Bum-Kyuko
dc.contributor.authorKim, Tae-Hyungko
dc.contributor.authorChoi, Dong-Hwanko
dc.contributor.authorKim, Hanulko
dc.contributor.authorWatanabe, Kenjiko
dc.contributor.authorTaniguchi, Takashiko
dc.contributor.authorRho, Heesukko
dc.contributor.authorKim, Ju-Jinko
dc.contributor.authorKim, Yong-Hoonko
dc.contributor.authorBae, Myung-Hoko
dc.date.accessioned2021-02-26T05:30:06Z-
dc.date.available2021-02-26T05:30:06Z-
dc.date.created2020-11-29-
dc.date.created2020-11-29-
dc.date.issued2021-01-
dc.identifier.citationNPJ 2D MATERIALS AND APPLICATIONS, v.5, no.1, pp.9-
dc.identifier.issn2397-7132-
dc.identifier.urihttp://hdl.handle.net/10203/281035-
dc.description.abstractThe achievement of ultraclean Ohmic van der Waals (vdW) contacts at metal/transition-metal dichalcogenide (TMDC) interfaces would represent a critical step for the development of high-performance electronic and optoelectronic devices based on two-dimensional (2D) semiconductors. Herein, we report the fabrication of ultraclean vdW contacts between indium (In) and molybdenum disulfide (MoS2) and the clarification of the atomistic origins of its Ohmic-like transport properties. Atomically clean In/MoS2 vdW contacts are achieved by evaporating In with a relatively low thermal energy and subsequently cooling the substrate holder down to similar to 100K by liquid nitrogen. We reveal that the high-quality In/MoS2 vdW contacts are characterized by a small interfacial charge transfer and the Ohmic-like transport based on the field-emission mechanism over a wide temperature range from 2.4 to 300K. Accordingly, the contact resistance reaches similar to 600 Omega mu m and similar to 1000 Omega mu m at cryogenic temperatures for the few-layer and monolayer MoS2 cases, respectively. Density functional calculations show that the formation of large in-gap states due to the hybridization between In and MoS2 conduction band edge states is the microscopic origins of the Ohmic charge injection. We suggest that seeking a mechanism to generate strong density of in-gap states while maintaining the pristine contact geometry with marginal interfacial charge transfer could be a general strategy to simultaneously avoid Fermi-level pinning and minimize contact resistance for 2D vdW materials.-
dc.languageEnglish-
dc.publisherNATURE PUBLISHING GROUP-
dc.titleOrigins of genuine Ohmic van der Waals contact between indium and MoS2-
dc.typeArticle-
dc.identifier.wosid000609452300001-
dc.identifier.scopusid2-s2.0-85098986498-
dc.type.rimsART-
dc.citation.volume5-
dc.citation.issue1-
dc.citation.beginningpage9-
dc.citation.publicationnameNPJ 2D MATERIALS AND APPLICATIONS-
dc.identifier.doi10.1038/s41699-020-00191-z-
dc.contributor.localauthorKim, Yong-Hoon-
dc.contributor.nonIdAuthorKim, Bum-Kyu-
dc.contributor.nonIdAuthorChoi, Dong-Hwan-
dc.contributor.nonIdAuthorKim, Hanul-
dc.contributor.nonIdAuthorWatanabe, Kenji-
dc.contributor.nonIdAuthorTaniguchi, Takashi-
dc.contributor.nonIdAuthorRho, Heesuk-
dc.contributor.nonIdAuthorKim, Ju-Jin-
dc.contributor.nonIdAuthorBae, Myung-Ho-
dc.description.isOpenAccessY-
dc.type.journalArticleArticle-
dc.subject.keywordPlusMETAL CONTACTS-
dc.subject.keywordPlusELECTRICAL CONTACTS-
dc.subject.keywordPlusTRANSISTORS-
dc.subject.keywordPlusMOBILITY-
dc.subject.keywordPlusBN-
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