DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Bum-Kyu | ko |
dc.contributor.author | Kim, Tae-Hyung | ko |
dc.contributor.author | Choi, Dong-Hwan | ko |
dc.contributor.author | Kim, Hanul | ko |
dc.contributor.author | Watanabe, Kenji | ko |
dc.contributor.author | Taniguchi, Takashi | ko |
dc.contributor.author | Rho, Heesuk | ko |
dc.contributor.author | Kim, Ju-Jin | ko |
dc.contributor.author | Kim, Yong-Hoon | ko |
dc.contributor.author | Bae, Myung-Ho | ko |
dc.date.accessioned | 2021-02-26T05:30:06Z | - |
dc.date.available | 2021-02-26T05:30:06Z | - |
dc.date.created | 2020-11-29 | - |
dc.date.created | 2020-11-29 | - |
dc.date.issued | 2021-01 | - |
dc.identifier.citation | NPJ 2D MATERIALS AND APPLICATIONS, v.5, no.1, pp.9 | - |
dc.identifier.issn | 2397-7132 | - |
dc.identifier.uri | http://hdl.handle.net/10203/281035 | - |
dc.description.abstract | The achievement of ultraclean Ohmic van der Waals (vdW) contacts at metal/transition-metal dichalcogenide (TMDC) interfaces would represent a critical step for the development of high-performance electronic and optoelectronic devices based on two-dimensional (2D) semiconductors. Herein, we report the fabrication of ultraclean vdW contacts between indium (In) and molybdenum disulfide (MoS2) and the clarification of the atomistic origins of its Ohmic-like transport properties. Atomically clean In/MoS2 vdW contacts are achieved by evaporating In with a relatively low thermal energy and subsequently cooling the substrate holder down to similar to 100K by liquid nitrogen. We reveal that the high-quality In/MoS2 vdW contacts are characterized by a small interfacial charge transfer and the Ohmic-like transport based on the field-emission mechanism over a wide temperature range from 2.4 to 300K. Accordingly, the contact resistance reaches similar to 600 Omega mu m and similar to 1000 Omega mu m at cryogenic temperatures for the few-layer and monolayer MoS2 cases, respectively. Density functional calculations show that the formation of large in-gap states due to the hybridization between In and MoS2 conduction band edge states is the microscopic origins of the Ohmic charge injection. We suggest that seeking a mechanism to generate strong density of in-gap states while maintaining the pristine contact geometry with marginal interfacial charge transfer could be a general strategy to simultaneously avoid Fermi-level pinning and minimize contact resistance for 2D vdW materials. | - |
dc.language | English | - |
dc.publisher | NATURE PUBLISHING GROUP | - |
dc.title | Origins of genuine Ohmic van der Waals contact between indium and MoS2 | - |
dc.type | Article | - |
dc.identifier.wosid | 000609452300001 | - |
dc.identifier.scopusid | 2-s2.0-85098986498 | - |
dc.type.rims | ART | - |
dc.citation.volume | 5 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | 9 | - |
dc.citation.publicationname | NPJ 2D MATERIALS AND APPLICATIONS | - |
dc.identifier.doi | 10.1038/s41699-020-00191-z | - |
dc.contributor.localauthor | Kim, Yong-Hoon | - |
dc.contributor.nonIdAuthor | Kim, Bum-Kyu | - |
dc.contributor.nonIdAuthor | Choi, Dong-Hwan | - |
dc.contributor.nonIdAuthor | Kim, Hanul | - |
dc.contributor.nonIdAuthor | Watanabe, Kenji | - |
dc.contributor.nonIdAuthor | Taniguchi, Takashi | - |
dc.contributor.nonIdAuthor | Rho, Heesuk | - |
dc.contributor.nonIdAuthor | Kim, Ju-Jin | - |
dc.contributor.nonIdAuthor | Bae, Myung-Ho | - |
dc.description.isOpenAccess | Y | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | METAL CONTACTS | - |
dc.subject.keywordPlus | ELECTRICAL CONTACTS | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | BN | - |
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