DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Kayoung | ko |
dc.contributor.author | Fallahazad, Babak | ko |
dc.contributor.author | Min, Hongki | ko |
dc.contributor.author | Tutuc, Emanuel | ko |
dc.date.accessioned | 2021-02-17T07:50:23Z | - |
dc.date.available | 2021-02-17T07:50:23Z | - |
dc.date.created | 2021-02-17 | - |
dc.date.issued | 2013-01 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.60, no.1, pp.103 - 108 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | http://hdl.handle.net/10203/280819 | - |
dc.description.abstract | Graphene bilayers in Bernal stacking exhibit a transverse electric (E) field-dependent band gap, which can be used to increase the channel resistivity and enable higher on/off ratio devices. We provide a systematic investigation of transport characteristics in dual-gated graphene bilayer devices as a function of density and E field and at temperatures from room temperature down to 0.3 K. The sample conductivity shows finite threshold voltages along the electron and hole branches, which increase as the E field increases, similar to a gapped semiconductor. We extract the transport gap as a function of E field and discuss the impact of disorder. In addition, we show that beyond the threshold, the bilayer conductivity shows a highly linear dependence on density, which is largely insensitive to the applied E field and the temperature. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Transport Gap in Dual-Gated Graphene Bilayers Using Oxides as Dielectrics | - |
dc.type | Article | - |
dc.identifier.wosid | 000316816200017 | - |
dc.identifier.scopusid | 2-s2.0-84871757503 | - |
dc.type.rims | ART | - |
dc.citation.volume | 60 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | 103 | - |
dc.citation.endingpage | 108 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.identifier.doi | 10.1109/TED.2012.2228203 | - |
dc.contributor.localauthor | Lee, Kayoung | - |
dc.contributor.nonIdAuthor | Fallahazad, Babak | - |
dc.contributor.nonIdAuthor | Min, Hongki | - |
dc.contributor.nonIdAuthor | Tutuc, Emanuel | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Bilayer | - |
dc.subject.keywordAuthor | graphene | - |
dc.subject.keywordAuthor | transport gap | - |
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