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Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures

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dc.contributor.authorFallahazad, Babakko
dc.contributor.authorLee, Kayoungko
dc.contributor.authorKang, Sangwooko
dc.contributor.authorXue, Jiaminko
dc.contributor.authorLarentis, Stefanoko
dc.contributor.authorCorbet, Christopherko
dc.contributor.authorKim, Kyounghwanko
dc.contributor.authorMovva, Hema C. P.ko
dc.contributor.authorTaniguchi, Takashiko
dc.contributor.authorWatanabe, Kenjiko
dc.contributor.authorRegister, Leonard F.ko
dc.contributor.authorBanerjee, Sanjay K.ko
dc.contributor.authorTutuc, Emanuelko
dc.date.accessioned2021-02-17T07:50:20Z-
dc.date.available2021-02-17T07:50:20Z-
dc.date.created2021-02-17-
dc.date.issued2015-01-
dc.identifier.citationNANO LETTERS, v.15, no.1, pp.428 - 433-
dc.identifier.issn1530-6984-
dc.identifier.urihttp://hdl.handle.net/10203/280818-
dc.description.abstractWe demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer currentvoltage characteristics of rotationally aligned double bilayer graphene heterostructures separated by hexagonal boron nitride (hBN) dielectric. An analysis of the heterostructure band alignment using individual layer densities, along with experimentally determined layer chemical potentials indicates that the resonance occurs when the energy bands of the two bilayer graphene are aligned. We discuss the tunneling resistance dependence on the interlayer hBN thickness, as well as the resonance width dependence on mobility and rotational alignment.-
dc.languageEnglish-
dc.publisherAMER CHEMICAL SOC-
dc.titleGate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures-
dc.typeArticle-
dc.identifier.wosid000348086100068-
dc.identifier.scopusid2-s2.0-84920948552-
dc.type.rimsART-
dc.citation.volume15-
dc.citation.issue1-
dc.citation.beginningpage428-
dc.citation.endingpage433-
dc.citation.publicationnameNANO LETTERS-
dc.identifier.doi10.1021/nl503756y-
dc.contributor.localauthorLee, Kayoung-
dc.contributor.nonIdAuthorFallahazad, Babak-
dc.contributor.nonIdAuthorKang, Sangwoo-
dc.contributor.nonIdAuthorXue, Jiamin-
dc.contributor.nonIdAuthorLarentis, Stefano-
dc.contributor.nonIdAuthorCorbet, Christopher-
dc.contributor.nonIdAuthorKim, Kyounghwan-
dc.contributor.nonIdAuthorMovva, Hema C. P.-
dc.contributor.nonIdAuthorTaniguchi, Takashi-
dc.contributor.nonIdAuthorWatanabe, Kenji-
dc.contributor.nonIdAuthorRegister, Leonard F.-
dc.contributor.nonIdAuthorBanerjee, Sanjay K.-
dc.contributor.nonIdAuthorTutuc, Emanuel-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorBilayer graphene-
dc.subject.keywordAuthorhexagonal boron nitride-
dc.subject.keywordAuthorheterostructure-
dc.subject.keywordAuthorresonant tunneling-
dc.subject.keywordAuthornegative differential resistance-
dc.subject.keywordAuthortunneling field-effect transistor-
dc.subject.keywordPlusCOULOMB DRAG-
dc.subject.keywordPlusBANDGAP-
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EE-Journal Papers(저널논문)
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