DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Seyoung | ko |
dc.contributor.author | Lee, Kayoung | ko |
dc.contributor.author | Tutuc, E. | ko |
dc.date.accessioned | 2021-02-17T07:30:20Z | - |
dc.date.available | 2021-02-17T07:30:20Z | - |
dc.date.created | 2021-02-17 | - |
dc.date.issued | 2011-06 | - |
dc.identifier.citation | PHYSICAL REVIEW LETTERS, v.107, no.1 | - |
dc.identifier.issn | 0031-9007 | - |
dc.identifier.uri | http://hdl.handle.net/10203/280810 | - |
dc.description.abstract | We investigate the transverse electric field (E) dependence of the nu = 0 quantum Hall state (QHS) in dual-gated graphene bilayers in high magnetic fields. The longitudinal resistivity rho(xx) measured at nu = 0 shows an insulating behavior which is strongest in the vicinity of E = 0, as well as at large E fields. At a fixed perpendicular magnetic field (B), the nu = 0 QHS undergoes a transition as a function of the applied E, marked by a minimum, temperature-independent rho(xx). This observation is explained by a transition from a spin-polarized nu = 0 QHS at small E fields to a valley-(layer-) polarized nu = 0 QHS at large E fields. The E field value at which the transition occurs follows a linear dependence on B. | - |
dc.language | English | - |
dc.publisher | AMER PHYSICAL SOC | - |
dc.title | Spin-Polarized to Valley-Polarized Transition in Graphene Bilayers at nu=0 in High Magnetic Fields | - |
dc.type | Article | - |
dc.identifier.wosid | 000292256400013 | - |
dc.identifier.scopusid | 2-s2.0-79961055111 | - |
dc.type.rims | ART | - |
dc.citation.volume | 107 | - |
dc.citation.issue | 1 | - |
dc.citation.publicationname | PHYSICAL REVIEW LETTERS | - |
dc.identifier.doi | 10.1103/PhysRevLett.107.016803 | - |
dc.contributor.localauthor | Lee, Kayoung | - |
dc.contributor.nonIdAuthor | Kim, Seyoung | - |
dc.contributor.nonIdAuthor | Tutuc, E. | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | PHASE | - |
dc.subject.keywordPlus | STATES | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.