DC Field | Value | Language |
---|---|---|
dc.contributor.author | Han, Sangyoon | ko |
dc.contributor.author | Kim, Dae-Gon | ko |
dc.contributor.author | Hwang, Joonhyuk | ko |
dc.contributor.author | Do, In Hwan | ko |
dc.contributor.author | Jeong, Dongin | ko |
dc.contributor.author | Dee, Yong-Hee | ko |
dc.contributor.author | Choi, Duk-Yong | ko |
dc.contributor.author | Lee, Hansuek | ko |
dc.date.accessioned | 2021-02-17T06:50:16Z | - |
dc.date.available | 2021-02-17T06:50:16Z | - |
dc.date.created | 2020-12-08 | - |
dc.date.created | 2020-12-08 | - |
dc.date.issued | 2019-07-28 | - |
dc.identifier.citation | 2019 International Conference on Optical MEMS and Nanophotonics, OMN 2019, pp.28 - 29 | - |
dc.identifier.issn | 2160-5033 | - |
dc.identifier.uri | http://hdl.handle.net/10203/280801 | - |
dc.description.abstract | We have experimentally demonstrated on-chip chalcogenide resonators with Q-factor of 1.1x107 using a new fabrication method which avoids direct etching of chalcogenide film. Low threshold power (12mW) Brillouin laser is implemented using the fabrication method. Also, cascaded lasing up to 3rd stokes have been observed with 42 mW of pump power. | - |
dc.language | English | - |
dc.publisher | IEEE Computer Society | - |
dc.title | Brillouin Lasers Based on 11 Million-Q On-Chip Chalcogenide Resonators Without Direct Etch Process | - |
dc.type | Conference | - |
dc.identifier.wosid | 000522410000013 | - |
dc.identifier.scopusid | 2-s2.0-85077606653 | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 28 | - |
dc.citation.endingpage | 29 | - |
dc.citation.publicationname | 2019 International Conference on Optical MEMS and Nanophotonics, OMN 2019 | - |
dc.identifier.conferencecountry | KO | - |
dc.identifier.conferencelocation | KAIST, Daejeon | - |
dc.identifier.doi | 10.1109/OMN.2019.8925242 | - |
dc.contributor.localauthor | Dee, Yong-Hee | - |
dc.contributor.localauthor | Lee, Hansuek | - |
dc.contributor.nonIdAuthor | Choi, Duk-Yong | - |
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