DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, JY | ko |
dc.contributor.author | Phaneuf, RJ | ko |
dc.date.accessioned | 2021-02-03T07:10:10Z | - |
dc.date.available | 2021-02-03T07:10:10Z | - |
dc.date.created | 2020-12-26 | - |
dc.date.issued | 2003-01 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.82, no.1, pp.64 - 66 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/280491 | - |
dc.description.abstract | We report on the variation in the response time in scanning tunneling microscopy (STM) measurements across a Si pn junction, and its effect on STM images of such devices. The response time of the tip height subsequent to a stepwise change in the voltage at a fixed demanded current varies by almost two orders of magnitude across the junction, with the slowest response of nearly 80 ms corresponding to the tip-sample junction in strong inversion. Measurements at decreasing separation show an increase in response time up to a saturation point, consistent with screening due to the inversion charge. The slow response in regions where the tip-sample junction is in inversion explains observations of anomalously deep features in STM topography images and scan direction-dependent features in STM conductance maps. (C) 2003 American Institute of Physics. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Time response in tunneling to a pn junction | - |
dc.type | Article | - |
dc.identifier.wosid | 000180134100022 | - |
dc.identifier.scopusid | 2-s2.0-0037421350 | - |
dc.type.rims | ART | - |
dc.citation.volume | 82 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | 64 | - |
dc.citation.endingpage | 66 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.1533849 | - |
dc.contributor.localauthor | Park, JY | - |
dc.contributor.nonIdAuthor | Phaneuf, RJ | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | FORCE MICROSCOPY | - |
dc.subject.keywordPlus | TRAPPED CHARGE | - |
dc.subject.keywordPlus | SIO2 | - |
dc.subject.keywordPlus | SILICON | - |
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