Nonmonotonic temperature dependent transport in graphene grown by chemical vapor deposition

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dc.contributor.authorHeo, J.ko
dc.contributor.authorChung, H. J.ko
dc.contributor.authorLee, Sung-Hoonko
dc.contributor.authorYang, H.ko
dc.contributor.authorSeo, D. H.ko
dc.contributor.authorShin, J. K.ko
dc.contributor.authorChung, U-Inko
dc.contributor.authorSeo, S.ko
dc.contributor.authorHwang, E. H.ko
dc.contributor.authorDas Sarma, S.ko
dc.date.accessioned2021-01-28T06:15:03Z-
dc.date.available2021-01-28T06:15:03Z-
dc.date.created2021-01-26-
dc.date.created2021-01-26-
dc.date.issued2011-07-
dc.identifier.citationPHYSICAL REVIEW B, v.84, no.3-
dc.identifier.issn1098-0121-
dc.identifier.urihttp://hdl.handle.net/10203/280251-
dc.description.abstractCarrier density and temperature-dependent resistivity of graphene grown by chemical vapor deposition (CVD) is investigated. We observe in low mobility CVD graphene device a generic insulating behavior at low temperatures, and eventually a metallic behavior at high temperatures, manifesting a nonmonotonic temperature dependent resistivity. This feature is strongly affected by carrier density modulation with the low-density samples exhibiting insulating-like temperature dependence up to higher temperatures than the corresponding high-density samples. To explain the temperature and density dependence of the resistivity, we introduce thermal activation of charge carriers in electron-hole puddles induced by randomly distributed charged impurities. Our observed temperature evolution of resistivity is then understood from the competition among thermal activation of charge carriers, temperature-dependent screening, and phonon scattering effects. Our experimental results are in good agreement with recent theories of graphene transport.-
dc.languageEnglish-
dc.publisherAMER PHYSICAL SOC-
dc.titleNonmonotonic temperature dependent transport in graphene grown by chemical vapor deposition-
dc.typeArticle-
dc.identifier.wosid000293128900013-
dc.identifier.scopusid2-s2.0-79961220447-
dc.type.rimsART-
dc.citation.volume84-
dc.citation.issue3-
dc.citation.publicationnamePHYSICAL REVIEW B-
dc.identifier.doi10.1103/PhysRevB.84.035421-
dc.contributor.localauthorYang, H.-
dc.contributor.nonIdAuthorHeo, J.-
dc.contributor.nonIdAuthorChung, H. J.-
dc.contributor.nonIdAuthorLee, Sung-Hoon-
dc.contributor.nonIdAuthorSeo, D. H.-
dc.contributor.nonIdAuthorShin, J. K.-
dc.contributor.nonIdAuthorChung, U-In-
dc.contributor.nonIdAuthorSeo, S.-
dc.contributor.nonIdAuthorHwang, E. H.-
dc.contributor.nonIdAuthorDas Sarma, S.-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordPlusSUSPENDED GRAPHENE-
dc.subject.keywordPlusLARGE-AREA-
dc.subject.keywordPlusFILMS-
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