Nonmonotonic temperature dependent transport in graphene grown by chemical vapor deposition

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Carrier density and temperature-dependent resistivity of graphene grown by chemical vapor deposition (CVD) is investigated. We observe in low mobility CVD graphene device a generic insulating behavior at low temperatures, and eventually a metallic behavior at high temperatures, manifesting a nonmonotonic temperature dependent resistivity. This feature is strongly affected by carrier density modulation with the low-density samples exhibiting insulating-like temperature dependence up to higher temperatures than the corresponding high-density samples. To explain the temperature and density dependence of the resistivity, we introduce thermal activation of charge carriers in electron-hole puddles induced by randomly distributed charged impurities. Our observed temperature evolution of resistivity is then understood from the competition among thermal activation of charge carriers, temperature-dependent screening, and phonon scattering effects. Our experimental results are in good agreement with recent theories of graphene transport.
Publisher
AMER PHYSICAL SOC
Issue Date
2011-07
Language
English
Article Type
Article
Citation

PHYSICAL REVIEW B, v.84, no.3

ISSN
1098-0121
DOI
10.1103/PhysRevB.84.035421
URI
http://hdl.handle.net/10203/280251
Appears in Collection
PH-Journal Papers(저널논문)
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