Enhanced Current Drivability of CVD Graphene Interconnect in Oxygen-Deficient Environment

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Graphene has been considered as a candidate for interconnect metal due to its high carrier mobility and current drivability. In this letter, the breakdown mechanism of single-layer chemical-vapor-deposited (CVD) graphene and triple-layer CVD graphene has been investigated at three different conditions (air exposed, vacuum, and dielectric capped) to identify a failure mechanism. In vacuum, both single-and triple-layer graphenes demonstrated a breakdown current density as high as similar to 10(8) A/cm(2), which is similar to that of exfoliated graphene. On the other hand, the breakdown current of graphene exposed to air was degraded by one order of magnitude from that of graphene tested in vacuum. Thus, oxidation initiated at the defect sites of CVD graphene was suggested as a major failure mechanism in air, while Joule heating was more dominant with dielectric capping and in vacuum.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2011-11
Language
English
Article Type
Article
Citation

IEEE ELECTRON DEVICE LETTERS, v.32, no.11, pp.1591 - 1593

ISSN
0741-3106
DOI
10.1109/LED.2011.2166240
URI
http://hdl.handle.net/10203/280247
Appears in Collection
PH-Journal Papers(저널논문)
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