Tunable Out-of-Plane Piezoelectricity in Thin-Layered MoTe2 by Surface Corrugation-Mediated Flexoelectricity

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dc.contributor.authorKang, Seunghunko
dc.contributor.authorJeon, Serako
dc.contributor.authorKim, Serako
dc.contributor.authorSeol, Daeheeko
dc.contributor.authorYang, Heejunko
dc.contributor.authorLee, Jeakwangko
dc.contributor.authorKim, Yunseokko
dc.date.accessioned2021-01-28T06:12:53Z-
dc.date.available2021-01-28T06:12:53Z-
dc.date.created2021-01-26-
dc.date.created2021-01-26-
dc.date.created2021-01-26-
dc.date.issued2018-08-
dc.identifier.citationACS APPLIED MATERIALS & INTERFACES, v.10, no.32, pp.27424 - 27431-
dc.identifier.issn1944-8244-
dc.identifier.urihttp://hdl.handle.net/10203/280215-
dc.description.abstractPiezoelectricity crystallographically exists only in the in-plane direction in two-dimensional transition metal dichalcogenides. Here, we demonstrated flexoelectricity-tunable out-of-plane piezoelectricity in semiconducting 2H-MoTe2 flakes by creating surface corrugation. In particular, the strong out-of plane piezoelectricity and its spatial variation depending on local flexoelectricity was observed even though crystallographically there exists only in-plane piezoelectricity. Surface corrugation mediated flexoelectricity tuning can be applied to other two-dimensional or thin-layered materials and, furthermore, the results could provide useful information on the interweaving nature between mechanical stimulus and electric dipole in low-dimensional materials.-
dc.languageEnglish-
dc.publisherAMER CHEMICAL SOC-
dc.titleTunable Out-of-Plane Piezoelectricity in Thin-Layered MoTe2 by Surface Corrugation-Mediated Flexoelectricity-
dc.typeArticle-
dc.identifier.wosid000442460400066-
dc.identifier.scopusid2-s2.0-85050357564-
dc.type.rimsART-
dc.citation.volume10-
dc.citation.issue32-
dc.citation.beginningpage27424-
dc.citation.endingpage27431-
dc.citation.publicationnameACS APPLIED MATERIALS & INTERFACES-
dc.identifier.doi10.1021/acsami.8b06325-
dc.contributor.localauthorYang, Heejun-
dc.contributor.nonIdAuthorKang, Seunghun-
dc.contributor.nonIdAuthorJeon, Sera-
dc.contributor.nonIdAuthorKim, Sera-
dc.contributor.nonIdAuthorSeol, Daehee-
dc.contributor.nonIdAuthorLee, Jeakwang-
dc.contributor.nonIdAuthorKim, Yunseok-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthortwo-dimensional transition-metal dichalcogenides-
dc.subject.keywordAuthorcorrugation-
dc.subject.keywordAuthorflexoelectricity-
dc.subject.keywordAuthorout-of-plane piezoelectricity-
dc.subject.keywordAuthorpiezoresponse force microscopy-
dc.subject.keywordPlusTRANSITION-METAL DICHALCOGENIDES-
dc.subject.keywordPlusMONOLAYER MOS2-
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