DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kang, Seunghun | ko |
dc.contributor.author | Kim, Sera | ko |
dc.contributor.author | Jeon, Sera | ko |
dc.contributor.author | Jang, Woo-Sung | ko |
dc.contributor.author | Seol, Daehee | ko |
dc.contributor.author | Kim, Young-Min | ko |
dc.contributor.author | Lee, Jaekwang | ko |
dc.contributor.author | Yang, Heejun | ko |
dc.contributor.author | Kim, Yunseok | ko |
dc.date.accessioned | 2021-01-28T06:12:11Z | - |
dc.date.available | 2021-01-28T06:12:11Z | - |
dc.date.created | 2021-01-26 | - |
dc.date.created | 2021-01-26 | - |
dc.date.created | 2021-01-26 | - |
dc.date.issued | 2019-04 | - |
dc.identifier.citation | NANO ENERGY, v.58, pp.57 - 62 | - |
dc.identifier.issn | 2211-2855 | - |
dc.identifier.uri | http://hdl.handle.net/10203/280207 | - |
dc.description.abstract | It is known that only in-plane piezoelectricity exists in pristine two dimensional (2D) transition metal dichalcogenides (TMDs). In this study, we demonstrate the creation of strong out-of-plane piezoelectricity in semi-conducting 2H-MoTe2 flakes by an artificial atomic-scale symmetry breaking. The atomic-scale symmetry breaking associated with flexoelectricity was realized through Te vacancy formation by a simple thermal annealing of the 2D TMDs. The strong out-of-plane piezoelectricity was experimentally measured and confirmed by theoretical calculations. This strategy of atomic-scale symmetry modulation for out-of-plane piezoelectricity can be easily applied to a broader class of 2D TMD materials that have not been used for applications with out-of-plane piezoelectricity. Accordingly, it can stimulate the expansion of practical energy device applications with 2D TMD materials. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Atomic-scale symmetry breaking for out-of-plane piezoelectricity in two-dimensional transition metal dichalcogenides | - |
dc.type | Article | - |
dc.identifier.wosid | 000461433600007 | - |
dc.identifier.scopusid | 2-s2.0-85059850173 | - |
dc.type.rims | ART | - |
dc.citation.volume | 58 | - |
dc.citation.beginningpage | 57 | - |
dc.citation.endingpage | 62 | - |
dc.citation.publicationname | NANO ENERGY | - |
dc.identifier.doi | 10.1016/j.nanoen.2019.01.025 | - |
dc.contributor.localauthor | Yang, Heejun | - |
dc.contributor.nonIdAuthor | Kang, Seunghun | - |
dc.contributor.nonIdAuthor | Kim, Sera | - |
dc.contributor.nonIdAuthor | Jeon, Sera | - |
dc.contributor.nonIdAuthor | Jang, Woo-Sung | - |
dc.contributor.nonIdAuthor | Seol, Daehee | - |
dc.contributor.nonIdAuthor | Kim, Young-Min | - |
dc.contributor.nonIdAuthor | Lee, Jaekwang | - |
dc.contributor.nonIdAuthor | Kim, Yunseok | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | Transition metal dichalcogenides | - |
dc.subject.keywordAuthor | Te vacancy | - |
dc.subject.keywordAuthor | Flexoelectricity | - |
dc.subject.keywordAuthor | Out-of-plane piezoelectricity | - |
dc.subject.keywordAuthor | Piezoresponse force microscopy | - |
dc.subject.keywordPlus | LAYER MOS2 | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.