2D layer-embedded transparent photovoltaics

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dc.contributor.authorPatel, Malkeshkumarko
dc.contributor.authorThanh Tai Nguyenko
dc.contributor.authorKumar, Mohitko
dc.contributor.authorBan, Dong-Kyunko
dc.contributor.authorWon, Dongyeunko
dc.contributor.authorZhao, Maliko
dc.contributor.authorKim, Joondongko
dc.contributor.authorKim, Yu Kwonko
dc.contributor.authorYang, Heejunko
dc.contributor.authorWong, Ching-Pingko
dc.date.accessioned2021-01-28T06:10:28Z-
dc.date.available2021-01-28T06:10:28Z-
dc.date.created2021-01-26-
dc.date.created2021-01-26-
dc.date.created2021-01-26-
dc.date.issued2020-02-
dc.identifier.citationNANO ENERGY, v.68, pp.104328-
dc.identifier.issn2211-2855-
dc.identifier.urihttp://hdl.handle.net/10203/280183-
dc.description.abstractTransparent photovoltaics (TPV) is an efficient and practical way of producing renewable energy. While optimizing visible transmission and light-matter interaction in semiconductors is a critical challenge in the TPV, using two-dimensional (2D) semiconductors has been considered a promising solution for the TPV due to their high quantum yield and stability. The remained challenges with 2D semiconductors for the TPV are non-scalability in the fabrication method and the limited power generation with low open-circuit voltages. Here, we report wafer-scale TPV based on tin sulfide (SnS) with a sulfur-rich nanoplatelet geometry. The sulfur-rich SnS nanoplatelets originate from the unique thermodynamic nature of the growth process from confined tin and sulfur vapors between a solid SnS source and variable substrates in close proximity. The ultraviolet-selective photovoltaics with SnS via proximity vapor transfer demonstrates stable and balanced light-matter interaction: visible transmission of 60%, an open-circuit voltage of 0.7 V, and an output power of 6 mW by a 60 mW light. Our wafer-scale SnS overcomes current issues on stability and visible transmission for practical TPV.-
dc.languageEnglish-
dc.publisherELSEVIER-
dc.title2D layer-embedded transparent photovoltaics-
dc.typeArticle-
dc.identifier.wosid000513811800001-
dc.identifier.scopusid2-s2.0-85075928244-
dc.type.rimsART-
dc.citation.volume68-
dc.citation.beginningpage104328-
dc.citation.publicationnameNANO ENERGY-
dc.identifier.doi10.1016/j.nanoen.2019.104328-
dc.contributor.localauthorYang, Heejun-
dc.contributor.nonIdAuthorPatel, Malkeshkumar-
dc.contributor.nonIdAuthorThanh Tai Nguyen-
dc.contributor.nonIdAuthorKumar, Mohit-
dc.contributor.nonIdAuthorBan, Dong-Kyun-
dc.contributor.nonIdAuthorWon, Dongyeun-
dc.contributor.nonIdAuthorZhao, Mali-
dc.contributor.nonIdAuthorKim, Joondong-
dc.contributor.nonIdAuthorKim, Yu Kwon-
dc.contributor.nonIdAuthorWong, Ching-Ping-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorWafer-scale film growth-
dc.subject.keywordAuthorProximity vapor transfer of 2D layers-
dc.subject.keywordAuthorTin sulfildes-
dc.subject.keywordAuthorTransparent optoelectronics-
dc.subject.keywordAuthorTransparent photovoltaics (TPV)-
dc.subject.keywordPlusTIO2 THIN-FILMS-
dc.subject.keywordPlusMETAL-OXIDE-
dc.subject.keywordPlusGRAPHENE-
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